Study on the time-resolved detection performance of β-Ga2O3-based SBUV photodetectors: surface chemical analysis and the impacts of non-VO factors

Abstract

The time-resolved detection performance of β-gallium oxide (β-Ga₂O₃)-based solar-blind ultraviolet (SBUV) photodetectors (PDs) are garnering extensive research attention. Generally, variations in the response and recovery rates of β-Ga₂O₃-based PDs have been attributed to oxygen vacancies (V_O), typically analyzed through X-ray photoelectron spectroscopy (XPS) O 1s spectra. However, in this study, we fabricated SBUV PDs with β-Ga₂O₃ films grown via metal–organic chemical vapor deposition (MOCVD). The surface chemical analysis of the obtained films reveals that the XPS O 1s spectra are unaffected by V_O. Additionally, by correlating film properties with PD performance, we demonstrate the significant role of non-V_O factors in shaping the time-resolved detection performance of these devices.