High-Performance Solution-Processed Near-Infrared Phototransistor with Non-Toxic Ag2Te Colloidal Quantum Dots/ZnO Heterostructure Channel

Abstract

The development of high-performance, solution-processed near-infrared (NIR) photodetectors remains a challenge, particularly those that are non-toxic and exhibit broad spectral response. In this work, a high-performance NIR photodetector based on a solution-processed field-effect transistor is reported by using non-toxic colloidal quantum dots (CQDs) heterostructure channel. Uniformly sized and well-dispersed Ag2Te CQDs are synthesized to form a ZnO/Ag2Te heterostructure for efficient NIR light absorption. The realized photodetector presents a record-high responsivity of 1.52×103 A/W and detectivity of 2.1×1011 Jones, along with a low response time of 19.06 ms under low intensity 940 nm light illumination. Moreover, the device maintains high responsivity and detectivity for 895 nm and 1000 nm NIRs, exceeding 300 A/W and 5×1010 Jones, respectively. This work demonstrates a novel approach to fabricating high-performance, non-toxic NIR active-matrix sensing arrays for in vivo imaging and biosensing.