Issue 12, 2022

Role of pO2 and film microstructure on the memristive properties of La2NiO4+δ/LaNiO3−δ bilayers

Abstract

LaNiO3/La2NiO4 bilayers deposited at varying pO2 conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO3/La2NiO4/Pt devices. The devices deposited at low pO2 showed the largest memristance. We propose this is due to the formation of a p-type Schottky contact between LaNiO3 and La2NiO4, where the extent of its carrier depletion width can be modulated by the electric-field induced drift of interstitial oxygen ions acting as mobile acceptor dopants in La2NiO4.

Graphical abstract: Role of pO2 and film microstructure on the memristive properties of La2NiO4+δ/LaNiO3−δ bilayers

Supplementary files

Article information

Article type
Paper
Submitted
01 des. 2021
Accepted
29 jan. 2022
First published
02 feb. 2022
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. A, 2022,10, 6523-6530

Role of pO2 and film microstructure on the memristive properties of La2NiO4+δ/LaNiO3−δ bilayers

K. Maas, C. Wulles, J. M. Caicedo Roque, B. Ballesteros, V. Lafarge, J. Santiso and M. Burriel, J. Mater. Chem. A, 2022, 10, 6523 DOI: 10.1039/D1TA10296F

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