Issue 9, 2025

Morphology and doping engineering of sulfur-doped g-C3N4 hollow nanovesicles for boosting photocatalytic hydrogen production

Abstract

The rational design and directional synthesis of desirable structural heteroatom-doped graphitic carbon nitride (CN) is of great significance for achieving efficient photocatalytic hydrogen evolution (HER) performance, but challenges remain. Herein, we have successfully developed an attractive sulfur-doped hollow CN nanovesicle (HV-SCN) photocatalyst via a supramolecular self-assembly strategy. The engineered HV-SCN not only possesses a large specific surface area, strong hydrophilicity and high light absorption capacity, but also displays efficient photogenerated carrier excitation and transfer efficiency. Consequently, the resultant HV-SCN achieves an extremely high H2 generation rate of 9.49 mmol h−1 g−1. Subsequent density functional theory (DFT) calculations and band configuration results confirm that S-doping induces band gap shortening and favorable hydrogen adsorption, which leads to enhanced photocatalytic HER performance of the HV-SCN. Furthermore, the catalytic mechanism and carrier migration dynamics are confirmed by in situ X-ray photoelectron and femtosecond transient absorption spectroscopy (fs-TAS). This study provides valuable experimental and theoretical references for the rational design and directional preparation of high-performance catalysts.

Graphical abstract: Morphology and doping engineering of sulfur-doped g-C3N4 hollow nanovesicles for boosting photocatalytic hydrogen production

Supplementary files

Article information

Article type
Paper
Submitted
30 12 2024
Accepted
24 1 2025
First published
24 1 2025

J. Mater. Chem. A, 2025,13, 6385-6396

Morphology and doping engineering of sulfur-doped g-C3N4 hollow nanovesicles for boosting photocatalytic hydrogen production

Z. Zhang, C. Song, J. Fan, Z. Fang, H. Wang and J. Zou, J. Mater. Chem. A, 2025, 13, 6385 DOI: 10.1039/D4TA09249J

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