A concise discussion on MoS2 basal plane activation toward the ennoblement of electrocatalytic HER output

Abstract

Over the last decades, MoS₂, being a member of the transition metal dichalcogenide family, is the second most extensively studied 2D-material, followed by graphene. Owing to its distinct electronic structure and outstanding physical and chemical properties. Being a widely used semiconductor material, some directions of its applications are still limited. The semiconducting 2H-phase of MoS₂ shows less catalytic activity due to the presence of a large number of chemically inert basal planes, whereas the metallic 1T-phase of MoS₂, which exhibits higher catalytic activity, cannot be furnished on a large scale due to the stabilization issue. Taking these demerits into consideration, the current researchers are highly dedicated to ameliorating the catalytic performance of MoS₂ by activating the chemically inert basal planes of MoS₂. There occurs a generation of new catalytic active centers on the basal plane of MoS₂ in addition to its active edge sites, which elevates its catalytic activity, i.e., electrocatalytic HER. In view of this, the current review sheds light on several methodologies for the activation of inert basal plane of MoS₂ including doping, etching, creating sulphur vacancies, and pores, which is of great importance toward boosting the catalytic execution of MoS₂.