Crystal structure, magnetotransport properties, and electronic band structure of V1−xTixSe2 single crystals

Abstract

We fabricated full spectrum V_1−xTi_xSe₂ samples (0 ≤ x ≤ 1) and systematically studied their crystal structure and electrical properties and their band structure. Ti was found by X-ray diffraction to substitute for V atoms. Our results show that the electrical properties of V_1−xTi_xSe₂ are highly tunable, suggesting a promising application in future electronic devices. In addition, we have observed weak localization in VSe₂ and TiSe₂ single crystals, and the strength of weak localization can be modulated by the defect density. The charge density wave transition for both pure samples, TiSe₂ and VSe₂, is significantly suppressed by doping. Band structure calculations on a subset of V_1−xTi_xSe₂ compositions are in line with the experimental observations.