Electron spin dynamics in vertical magnetic junctions incorporating two-dimensional layered materials

Abstract

Graphene and related two dimensional (2D) materials (transition metal dichalcogenides (TMDCs), hexagonal boron nitride) and their hybrid systems have recently been emerged as promising candidates for spintronic applications. Here, we review the spin valve effect in vertical magnetic junctions incorporating semi-metallic graphene, semiconducting TMDCs (MoS₂ and WS₂), an insulating hexagonal boron nitride (hBN) and various other combinations of these layers. The number of intervening layers, the fabrication process, the quality of the interlayer, the role of different interlayers and their hybrid systems are reviewed for modifying the magnetotransport properties in these magnetic junctions. Also, the spin valve effect in graphene–hBN and graphene–Al₂O₃ heterostructured devices is particularly discussed to address the polarity of magnetoresistance. To determine whether 2D material-magnetic junctions are ohmic, the current–voltage (I–V) characteristics and temperature dependence of the junction resistance are briefly investigated for various junctions.