Issue 1, 2020
From the journal:

Nanoscale Advances

Improvement in hole transporting ability and device performance of quantum dot light emitting diodes†

Pei-Chieh Chiua  and  Sheng-Hsiung Yang ORCID logo *a  

* Corresponding authors

a Institute of Lighting and Energy Photonics, College of Photonics, National Chiao Tung University, No. 301, Gaofa 3rd Road, Guiren District, Tainan City 71150, Taiwan, Republic of China
E-mail: yangsh@mail.nctu.edu.tw
Fax: +886-6-3032535
Tel: +886-6-3032121 ext. 57895

Abstract

In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139 909 cd m−2 and current efficiency of 27.2 cd A−1 were obtained for the optimized device with the configuration of ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.

Graphical abstract: Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

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Article information

DOI
https://doi.org/10.1039/C9NA00618D
Article type
Paper
Submitted
02 Okt. 2019
Accepted
21 Nov. 2019
First published
21 Nov. 2019
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2020,2, 401-407

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Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

P. Chiu and S. Yang, Nanoscale Adv., 2020, 2, 401 DOI: 10.1039/C9NA00618D

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