Issue 44, 2020

Structure-induced optoelectronic properties of phenothiazine-based materials

Abstract

Phenothiazine (PTZ)-based materials have recently received considerable interest owing to their intriguing optoelectronic properties, low-cost, versatility of functionalization, and commercial availability. The advent of molecular engineering concepts in π-conjugated organic materials, such as the “donor–acceptor” approach, propelled the synthesis of a large number of PTZ-derivatives with tailored properties like low bandgap, tunable energy levels, and reversible redox properties. This resulted in the promising application of PTZs as electron donors or acceptors in organic solar cells or as hole-transporting materials in organic light-emitting diodes and perovskite solar cells. In this review, we discuss the recent and most appealing design strategies of PTZ-based materials for optoelectronics, with emphasis on the impact of the structural modifications on the fundamental physicochemical properties (absorption, emission, Frontier energy levels, charge carrier mobility). We also highlight the key achievements in the development of solar cells, light-emitting diodes, and batteries employing PTZ core semiconductors. Our final goal is to underpin the reasons that still limit the performance of PTZ-based optoelectronics and to outline future research directions for the next-generation PTZ materials with ever enhanced properties.

Graphical abstract: Structure-induced optoelectronic properties of phenothiazine-based materials

Article information

Article type
Review Article
Submitted
20 Jūl. 2020
Accepted
13 Okt. 2020
First published
15 Okt. 2020
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2020,8, 15486-15506

Structure-induced optoelectronic properties of phenothiazine-based materials

S. Revoju, A. Matuhina, L. Canil, H. Salonen, A. Hiltunen, A. Abate and P. Vivo, J. Mater. Chem. C, 2020, 8, 15486 DOI: 10.1039/D0TC03421E

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