A progressive journey into 2D-chalcogenide/carbide/nitride-based broadband photodetectors: recent developments and future perspectives

Abstract

Photodetection is one of the important technologies discussed in current scientific and technological circles because of its undeniable and widespread applications in industry and research. The application of conventional bulk semiconductors (GaN, Si, CdS, and InGaAs) to photodetection in industry is being gradually minimized due to poor mechanical firmness (rigidity) and flexibility, the need for expensive substrates, and low charge-carrier mobility. However, 2D materials other than graphene, including transition-metal chalcogenides, nitrides, and carbides, are paving the way towards obtaining more advanced outcomes and overcoming the bottleneck conditions imposed by conventional semiconductors due to their extraordinary electronic and mechanical properties, including flexibility, tunable bandgaps, high mobilities, and abundant potential for heterojunction construction. Due to the recent boom in 2D photodetection research, the area has become so broad and versatile that an organized account of relevant scientific information has become necessary. A categorized review is essentially required to cover topics including 2D material synthesis schemes, assembly techniques, device integration, spectral characteristics, the scope for heterojunctions, and future research directions. This review focuses on the application of 2D materials to photodetection, including comprehensive coverage of synthesis/assembly techniques, heterojunctions, and performance in different spectral regions, including solar-blind, visible, near-infrared, and broadband detectors. We further extend our discussion to hybridized van der Waals heterojunctions (vdWHs) with conventional semiconductors and the application of these materials as photodetectors. Finally, we give a comparative illustration of photodetector performance parameters, providing a clear picture of the acceptability of these materials for use in the development of next-generation photodetectors.