Issue 6, 2023

Two-dimensional MBenes with ordered metal vacancies for surface-enhanced Raman scattering

Abstract

As an emerging class of two-dimensional (2D) materials, MBenes show enormous potential for optoelectronic applications. However, their use in molecular sensing as surface-enhanced Raman scattering (SERS)-active material is unknown. Herein, for the first time, we develop a brand-new high-performance MBene SERS platform. Ordered vacancy-triggered highly sensitive SERS platform with outstanding signal uniformity based on a 2D Mo4/3B2 MBene material was designed. The 2D Mo4/3B2 MBene presented superior SERS activity to most of the semiconductor SERS substrates, showing a remarkable Raman enhancement factor of 3.88 × 106 and an ultralow detection limit of 1 × 10−9 M. The underlying SERS mechanism is revealed from systematic experiments and density functional theory calculations that the ultrahigh SERS sensitivity of 2D Mo4/3B2 MBene is derived from the efficient photoinduced charge transfer process between MBene substrates and adsorbed molecules. The abundant electronic density of states near the Fermi level of 2D Mo4/3B2 MBene enables its Raman enhancement by a factor of 100 000 times higher than that of the bulk MoB. Consequently, the 2D Mo4/3B2 MBene could accurately detect various trace chemical analytes. Moreover, with ordered metal vacancies in the 2D Mo4/3B2 MBene, uniform charge transfer sites are formed, resulting in an outstanding signal uniformity with a relative standard deviation down to 6.0%. This work opens up a new horizon for the high-performance SERS platform based on MBene materials, which holds great promise in the field of chemical sensing.

Graphical abstract: Two-dimensional MBenes with ordered metal vacancies for surface-enhanced Raman scattering

Supplementary files

Article information

Article type
Paper
Submitted
09 Nov. 2022
Accepted
05 Janv. 2023
First published
06 Janv. 2023

Nanoscale, 2023,15, 2779-2787

Two-dimensional MBenes with ordered metal vacancies for surface-enhanced Raman scattering

L. Lan, X. Fan, C. Zhao, J. Gao, Z. Qu, W. Song, H. Yao, M. Li and T. Qiu, Nanoscale, 2023, 15, 2779 DOI: 10.1039/D2NR06280A

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