Issue 8, 2024

Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning

Abstract

The development of flexible synaptic devices with multicolor signal response is important to exploit advanced artificial visual perception systems. The Sn vacancy-dominant memory and narrow gap characteristics of PEA2SnI4 make it suitable as a functional layer in ultraviolet-visible (UV-Vis) light-stimulated synaptic devices. However, such device tends to have high dark current and poor sensitivity, which is not conducive to subsequent information processing. Here, we proposed a self-powered flexible optoelectronic synapse based on PEA2SnI4 films. By introducing the electron transport layer (ETL), the dark current of the device is decreased by 5 orders of magnitude as compared to the Au/PEA2SnI4/ITO device, and the sensitivity is increased from 10.3% to 99.2% at 1.25 mW cm−2 light illumination (520 nm), indicating the vital role of the introduced ETL in promoting the separation of excitons in the interface and inhibiting the free carrier transfer. On this basis, the optoelectronic synaptic functions with integrated sensing, recognition, and memory features were realized. The array device exhibits UV-Vis light sensitivity and tunable synaptic plasticity, enabling its application for multicolor visual sensing and skin sunburn warning. This work provides an effective strategy for fabricating multicolor intelligent sensors and artificial vision systems, which facilitate the practical application of artificial optoelectronic synapses.

Graphical abstract: Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning

Supplementary files

Article information

Article type
Communication
Submitted
14 Dec. 2023
Accepted
29 Janv. 2024
First published
31 Janv. 2024

Mater. Horiz., 2024,11, 1934-1943

Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning

Y. Yang, Y. Li, D. Chen and G. Shen, Mater. Horiz., 2024, 11, 1934 DOI: 10.1039/D3MH02154H

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