Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications

Abstract

Gallium nitride (GaN) and aluminium nitride (AlN), as the representatives of new-generation wide band gap semiconductor materials, have become a hot spot in the semiconductor field due to their excellent characteristics. Benefiting from the unique two-dimensional (2D) layered structure and outstanding properties, 2D materials have proven to be good candidates for electronic and photoelectric devices, energy storage and conversion devices, and wearable devices. In recent years, plenty of research has been conducted for exploring the properties and fabrication of 2D GaN and AlN materials for different application purposes. In this review, the recent progress in 2D GaN and AlN materials, their properties, fabrication methods, and potential applications is summarized. Moreover, the challenges and the development trend of 2D group-III nitride semiconductor materials in the future are prospected.