Enhancement of electrical stability of metal oxide thin-film transistors against various stresses

Abstract

Metal-oxide semiconductors are considered promising alternative materials in the field of flat panel display industry due to their advantages, such as high mobility, transparency, uniformity, low production cost, and large-area processability. Nevertheless, stress-induced instability in metal-oxide thin-film transistors should be addressed for further applications. Various external stresses, such as voltage, illumination, heat, and ionizing radiation, have been known to affect the defect states in metal-oxide thin-film transistors, resulting in degradation of electrical performance, such as threshold voltage, mobility, and subthreshold swing. Therefore, recent research efforts have been focused on the prevention/reduction of defect generation in oxide semiconductors and the adjustment of defect states in the sub-gap by various approaches, such as introducing novel materials, optimizing fabrication processes, and improving device structures. This highlight article provides an overview of recent research efforts to enhance the stability of metal-oxide thin-film transistors against various external stresses. External stresses are categorized into five different types and degradation mechanisms as well as approaches for the enhancement of device stability for each stress are discussed. This highlight article intends to inspire new studies on metal oxide thin-film transistors for developing state-of-the-art electronic devices.