Issue 1, 2022

Dynamic processes in transient phases during self-assembly of organic semiconductor thin films

Abstract

Understanding and manipulating crystallization processes has been an important challenge for solution-processed organic thin films, both for fundamental studies and for fabricating thin films with near-intrinsic charge transport properties. We report an in situ X-ray scattering study of the crystallization of 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10) during its deposition from solution. At temperatures modestly below the smectic-E/crystalline phase boundary, the crystallization goes through a transient liquid crystal state before reaching the final stable crystalline phase. Significant dynamics occur in the first few seconds of the transition, which are observed through fluctuations in the X-ray scattering intensity, and are correlated with the time interval that the transient thin film coexists with the evaporating solvent. The transition to the stable crystalline phase takes minutes or even hours under these conditions, which may be a result of the asymmetry of the molecule. Transient phases are of potential interest for applications, since they can act as a route to self-assembly of organic thin films. However, our observations show that the long-lived monolayer-stacked intermediate state does not act as a template for the bilayer-stacked crystalline phase. Rather, the grain structure is replaced through nucleation, where the nucleation free-energy barrier is related to a potential barrier that prevents molecules to flip their long axis by 180°.

Graphical abstract: Dynamic processes in transient phases during self-assembly of organic semiconductor thin films

Supplementary files

Article information

Article type
Paper
Submitted
22 jun 2021
Accepted
27 sep 2021
First published
05 okt 2021

Mol. Syst. Des. Eng., 2022,7, 34-43

Author version available

Dynamic processes in transient phases during self-assembly of organic semiconductor thin films

J. Wan, Y. Li, J. Benson, R. Miller, M. Zhernenkov, G. Freychet and R. L. Headrick, Mol. Syst. Des. Eng., 2022, 7, 34 DOI: 10.1039/D1ME00078K

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