Oxovanadium electronics for in-memory, neuromorphic, and quantum computing applications

Abstract

Vanadium is a critical raw material. In the nearby future, it may, however, become one of the key elements of computer devices based on two-dimensional arrays of spin qubits for quantum information processing or charge- and resistance-based data memory cells for non-volatile in-memory and neuromorphic computing. The research and development (R&D) of vanadium-containing electronic materials and methods for their responsible fabrication underpins the transition to innovative hybrid semiconductors for energy- and resource-efficient memory and information processing technologies. The combination of standard and emerging solid-state semiconductors with stimuli-responsive oxo complexes of vanadium(IV,V) is envisioned to result in electronics with a new room-temperature device nanophysics, and the ability to modulate and control it at the sub-nanometer level. The development of exponential (Boolean) logics based on the oxovanadium-comprising circuitry and crossbar arrays of individual memristive cells for in-memory computing, the implementation of basic synaptic functions via dynamic electrical pulses for neuromorphic computing, and the readout and control of spin networks and interfaces for quantum computing are strategically important future areas of molecular chemistry and applied physics of vanadium.