From the journal:

Chemical Communications

Interfacial chemical bond engineering on Te semiconductor to weaken carrier-phonon coupling for boosting thermoelectric conversion performance

Decheng An,   Min Liu,   Zhiyong Si,   Wang Yue,   Wutao Yang  and  Xianming Zhang  

Abstract

The thermoelectric performance of Te-based semiconductors can be boosted utilizing interfacial chemical-bonding heterogeneity without doping matrix lattice. The resulting dual p-p type heterointerfaces through introducing metavalently bonded Bi2Te3 and covalently bonded B into Te, enable the obvious carrier-phonon decoupling.

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DOI
https://doi.org/10.1039/D5CC02836A
Article type
Communication
Submitted
19 mei 2025
Accepted
16 jun 2025
First published
16 jun 2025

Chem. Commun., 2025, Accepted Manuscript

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Interfacial chemical bond engineering on Te semiconductor to weaken carrier-phonon coupling for boosting thermoelectric conversion performance

D. An, M. Liu, Z. Si, W. Yue, W. Yang and X. Zhang, Chem. Commun., 2025, Accepted Manuscript , DOI: 10.1039/D5CC02836A

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