Radio frequency switching devices based on two-dimensional materials for high-speed communication applications

Abstract

Two-dimensional (2D) materials, with their atomic-scale thickness, high carrier mobility, tunable wide bandgap, and excellent electrical and mechanical properties, have demonstrated vast application prospects in the research of radio frequency (RF) switch devices. This review summarizes the recent advances in 2D materials for RF switch applications, focusing on the performance and mechanisms of 2D material-based RF switch devices under high frequencies, wide bandwidths, and high transmission rates. The analysis includes the design and optimization of devices based on graphene, transition metal dichalcogenides, hexagonal boron nitride, and their heterojunctions. By comparing the key performance parameters such as insertion loss, isolation, and cutoff frequency of the switches, this review reveals the influence of material selection, structural design, and defect control on device performance. Furthermore, it discusses the challenges of 2D material-based RF switches in practical applications, including material defect control, reduction of contact resistance, and the technical bottlenecks of large-scale industrial production. Finally, the review envisions future research directions, proposing potential pathways for improving device performance through heterojunction structures, multifunctional integration, and process optimization. This study is of great significance for advancing the development of high-performance RF switches and the application of communication technologies in 6G and higher frequency bands.