Advances in defect modulation strategies of indium antimonide semiconductor colloidal quantum dots for infrared photodetection

Abstract

Indium antimonide (InSb) colloidal quantum dots (CQDs) have emerged as promising materials for infrared photodetection due to their tunable bandgap and high carrier mobility. However, surface defects and structural imperfections can significantly degrade the performance of InSb CQD-based devices. Various defect suppression strategies have been explored to address this challenge, including surface passivation, core–shell engineering, and optimized synthesis conditions. This review provides a comprehensive overview of recent advancements in defect suppression techniques for InSb CQDs, highlighting the impact of these strategies on device performance. We discuss the mechanisms behind defect formation and their detrimental effects on carrier recombination and charge transport. By understanding the underlying principles and implementing effective defect suppression strategies, we can unlock the full potential of InSb CQDs for high-performance infrared photodetectors.