2D materials-based flash memory device: mechanism, structure, application

Abstract

Flash memory has become a foundational technology in modern electronic systems due to its non-volatility and high density. Traditional flash architectures, including NOR and NAND, rely on two primary memory cell structures, floating-gate and charge-trap transistors, which face increasing challenges in performance. Recently, 2D materials have emerged as promising candidates to overcome the limitations of conventional flash memory. Owing to their atomically thin nature, superior electrical properties, and excellent electrostatic control, 2D materials offer significant advantages in both floating-gate and charge-trap flash cells, enabling improvements in program/erase speed, data retention, and endurance. This review provides a comprehensive overview of the integration of 2D materials into flash memory technologies, focusing on their role in enhancing performance and enabling large-scale integration. Furthermore, the unique optoelectronic properties of 2D materials introduce exciting opportunities for multifunctional flash memory applications, such as neuromorphic computing. Despite remarkable progress, challenges such as material uniformity, CMOS compatibility and EDA platform adaptation remain. This review concludes by discussing current limitations and proposing future research directions toward realizing high-performance, scalable, and multifunctional 2D material-based flash memory.