Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells

Svette Reina Merden Santiago; Septem P. Caigas; Tzu-Neng Lin; Chi-Tsu Yuan; Ji-Lin Shen; Ching-Hsueh Chiu; Hao-Chung Kuo

doi:10.1039/C7RA13108A

Tunnel injection from WS₂ quantum dots to InGaN/GaN quantum wells

Svette Reina Merden Santiago,^a Septem P. Caigas,^a Tzu-Neng Lin,^a Chi-Tsu Yuan,^a Ji-Lin Shen,

*^a Ching-Hsueh Chiu^b and Hao-Chung Kuo^c

Author affiliations

* Corresponding authors

^a Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li 32023, Taiwan
E-mail: jlshen@cycu.edu.tw

^b Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan

^c Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan

Abstract

We propose a tunnel-injection structure, in which WS₂ quantum dots (QDs) act as the injector and InGaN/GaN quantum wells (QWs) act as the light emitters. Such a structure with different barrier thicknesses has been characterized using steady-state and time-resolved photoluminescence (PL). A simultaneous enhancement of the PL intensity and PL decay time for the InGaN QW were observed after transfer of charge carriers from the WS₂-QD injector to the InGaN-QW emitter. The tunneling time has been extracted from the time-resolved PL, which increases as the barrier thickness is increased. The dependence of the tunneling time on the barrier thickness is in good agreement with the prediction of the semiclassical Wentzel–Kramers–Brillouin model, confirming the mechanism of the tunnel injection between WS₂ QDs and InGaN QWs.

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DOI: https://doi.org/10.1039/C7RA13108A
Article type: Paper
Submitted: 07 Dec 2017
Accepted: 20 Mar 2018
First published: 24 Apr 2018
This article is Open Access

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RSC Adv., 2018,8, 15399-15404

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Tunnel injection from WS₂ quantum dots to InGaN/GaN quantum wells

S. R. M. Santiago, S. P. Caigas, T. Lin, C. Yuan, J. Shen, C. Chiu and H. Kuo, RSC Adv., 2018, 8, 15399 DOI: 10.1039/C7RA13108A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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Tunnel injection from WS₂ quantum dots to InGaN/GaN quantum wells

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Tunnel injection from WS₂ quantum dots to InGaN/GaN quantum wells

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