Issue 30, 2018, Issue in Progress
From the journal:

RSC Advances

Correction: Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells

Svette Reina Merden Santiago,a   Septem P. Caigas,a   Tzu-Neng Lin,a   Chi-Tsu Yuan,a   Ji-Lin Shen,*a   Ching-Hsueh Chiub  and  Hao-Chung Kuoc  

* Corresponding authors

a Department of Physics, Center for Nanotechnology, Chung Yuan Christian University, Chung-Li 32023, Taiwan
E-mail: jlshen@cycu.edu.tw

b Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan

c Department of Photonics, Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan

Abstract

Correction for ‘Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells’ by Svette Reina Merden Santiago et al., RSC Adv., 2018, 8, 15399–15404.

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Article information

DOI
https://doi.org/10.1039/C8RA90034E
Article type
Correction
Submitted
25 Apr 2018
Accepted
25 Apr 2018
First published
03 May 2018
This article is Open Access
Creative Commons BY license

RSC Adv., 2018,8, 16419-16419

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Correction: Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells

S. R. Merden Santiago, S. P. Caigas, T. Lin, C. Yuan, J. Shen, C. Chiu and H. Kuo, RSC Adv., 2018, 8, 16419 DOI: 10.1039/C8RA90034E

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