Optical properties and carrier dynamics in Co-doped ZnO nanorods

Aswathi K. Sivan; Alejandro Galán-González; Lorenzo Di Mario; Nicolas Tappy; Javier Hernández-Ferrer; Daniele Catone; Stefano Turchini; Ana M. Benito; Wolfgang K. Maser; Simon Escobar Steinvall; Anna Fontcuberta i Morral; Andrew Gallant; Dagou A. Zeze; Del Atkinson; Faustino Martelli

doi:10.1039/D0NA00693A

Optical properties and carrier dynamics in Co-doped ZnO nanorods†

Aswathi K. Sivan,

*^a Alejandro Galán-González,^bc Lorenzo Di Mario,^d Nicolas Tappy,^e Javier Hernández-Ferrer,

^f Daniele Catone,^d Stefano Turchini,^d Ana M. Benito,

^f Wolfgang K. Maser,

^f Simon Escobar Steinvall,

^e Anna Fontcuberta i Morral,

^eg Andrew Gallant,^b Dagou A. Zeze,

^bh Del Atkinson

^c and Faustino Martelli

*^a

Author affiliations

* Corresponding authors

^a Istituto per la Microelettronica e i Microsistemi (IMM), CNR, Rome, Italy
E-mail: aswathi.sivan@artov.imm.cnr.it, faustino.martelli@cnr.it

^b Department of Engineering, Durham University, South Rd, Durham, UK

^c Department of Physics, Durham University, South Rd, Durham, UK

^d Istituto di Struttura della Materia-CNR (ISM-CNR), Division of Ultrafast Processes in Materials (FLASHit), Area della Ricerca di Roma 2 Tor Vergata, 00133 Rome, Italy

^e Laboratoire des Matériaux Semiconducteurs, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

^f Instituto de Carboquímica (ICB-CSIC), C/Miguel Luesma Castán 4, 50018 Zaragoza, Spain

^g Institute of Physics, Faculty of Basic Sciences, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland

^h ITMO University, St. Petersburg, Russia

Abstract

The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic% in the growth solution. Optoelectronic behavior was probed using cathodoluminescence, time-resolved luminescence, transient absorbance spectroscopy, and the incident photon-to-current conversion efficiency (IPCE). Analysis indicates the crucial role of surface defects in determining the electronic behavior. Significantly, Co-doping extends the light absorption of the nanorods into the visible region, increases the surface defects, and shortens the non-radiative lifetimes, while leaving the radiative lifetime constant. Furthermore, for 1 atomic% Co-doping the IPCE of the ZnO nanorods is enhanced. These results demonstrate that doping can controllably tune the functional electronic properties of ZnO nanorods for applications.

Nanoscale Advances

Optical properties and carrier dynamics in Co-doped ZnO nanorods†

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