Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities

Hyun Jae Song; Seok Min Yoon; Hyun-Joon Shin; Hyunseob Lim; Chibeom Park; Hee Cheul Choi

doi:10.1039/B908361H

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Growth of germanium nanowires using liquid GeCl₄ as a precursor: the critical role of Si impurities†

Hyun Jae Song,^a Seok Min Yoon,^a Hyun-Joon Shin,^b Hyunseob Lim,^a Chibeom Park^a and Hee Cheul Choi*^a

Author affiliations

* Corresponding authors

^a Department of Chemistry and Graduate Institute of Advanced Materials Science, Pohang University of Science and Technology, San 31, Hyoja-Dong, Nam-Gu, Pohang, Korea
E-mail: choihc@postech.edu

^b Department of Physics and Pohang Accelerator Laboratory, Pohang University of Science and Technology, San 31, Hyoja-Dong, Nam-Gu, Pohang, Korea

Abstract

Liquid GeCl₄ precursors have been employed to grow into one dimensional Ge nanowires (NWs) via a vapor–liquid–solid (VLS) process, in which Si, supplied as a form of liquid SiCl₄, plays a critical role for the successful formation of Ge NWs.

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Supplementary files

Further details of overall experimental procedures, AFM imageof as-formed Au nanoparticles with its size distribution and Ramanspectrum of Ge nanowires PDF (868K)

Article information

DOI: https://doi.org/10.1039/B908361H
Article type: Communication
Submitted: 28 Apr 2009
Accepted: 25 Jun 2009
First published: 17 Jul 2009

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Chem. Commun., 2009, 5124-5126

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Growth of germanium nanowires using liquid GeCl₄ as a precursor: the critical role of Si impurities

H. J. Song, S. M. Yoon, H. Shin, H. Lim, C. Park and H. C. Choi, Chem. Commun., 2009, 5124 DOI: 10.1039/B908361H

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