Phase transition induced vertical alignment of ultrathin gallium phosphide nanowire arrays on silicon by chemical beam epitaxy†
Abstract
We demonstrate high-density heteroepitaxial growth of sub-10 nm diameter gallium phosphide (GaP)
* Corresponding authors
a
Institute for Advanced Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, China
E-mail:
zzhang@scnu.edu.cn
b Max Planck Institute of Microstructure Physics, Weinberg 2 Halle, Germany
c Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, China
d Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China
We demonstrate high-density heteroepitaxial growth of sub-10 nm diameter gallium phosphide (GaP)
Z. Zhang, S. Senz, F. Zhao, L. Chen, X. Gao and J. -M. Liu, RSC Adv., 2012, 2, 8631 DOI: 10.1039/C2RA21013D
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content