Issue 61, 2014

A novel method for photolithographic polymer shadow masking: toward high-resolution high-performance top-contact organic field effect transistors

Abstract

A novel and universal method, based on water-soluble poly(4-styrene sulfonate), was introduced into the preparation of a polymer mask. Using this mask, high-resolution, high-performance, bottom-gate, top-contact OFETs can be achieved. There is no solvent intervention in the process of manufacturing these OFETs and the mask can be recycled.

Graphical abstract: A novel method for photolithographic polymer shadow masking: toward high-resolution high-performance top-contact organic field effect transistors

Supplementary files

Article information

Article type
Communication
Submitted
15 Mar 2014
Accepted
30 Apr 2014
First published
02 May 2014

Chem. Commun., 2014,50, 8328-8330

Author version available

A novel method for photolithographic polymer shadow masking: toward high-resolution high-performance top-contact organic field effect transistors

D. Ji, L. Jiang, L. Jiang, X. Fu, H. Dong, J. Yu and W. Hu, Chem. Commun., 2014, 50, 8328 DOI: 10.1039/C4CC01932F

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