By using the simple but effective method—air plasma to treat the precursor Zn(OH)2, the hydrogen-related defects in ZnO, which lead to increased charge carrier recombination, have been reduced. Successfully, a photoelectric conversion efficiency of 8.03% for pure ZnO-based DSSCs has been achieved, which is the highest one up to now.
Y. He, J. Hu and Y. Xie, Chem. Commun., 2015, 51, 16229 DOI: 10.1039/C5CC04567C
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