Issue 16, 2017, Issue in Progress

Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

Abstract

Correction for ‘A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy’ by Marc Courté et al., RSC Adv., 2017, 7, 3336–3342.

Associated articles

Article information

Article type
Correction
Submitted
24 Jan 2017
Accepted
24 Jan 2017
First published
02 Feb 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 9772-9772

Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

M. Courté, S. G. Surya, R. Thamankar, C. Shen, V. R. Rao, S. G. Mhaisalkar and D. Fichou, RSC Adv., 2017, 7, 9772 DOI: 10.1039/C7RA90012K

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements