The critical role of wavelength in the UV-activated grafting of 1-alkene onto silicon and silicon nitride SixN4 surfaces

M. Brunet; D. Aureau; F. Guillemot; A. Etcheberry; F. Ozanam; A. C. Gouget-Laemmel

doi:10.1039/C8CC03207F

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The critical role of wavelength in the UV-activated grafting of 1-alkene onto silicon and silicon nitride Si_xN₄ surfaces†

M. Brunet,^ab D. Aureau,

^c F. Guillemot,^b A. Etcheberry,^c F. Ozanam

^a and A. C. Gouget-Laemmel

*^a

Author affiliations

* Corresponding authors

^a Physique de la Matière Condensée, Ecole Polytechnlque, CNRS, Université Paris Saclay, 91128 Palaiseau, France
E-mail: anne-chantal.gouget@polytechnique.edu

^b Saint-Gobain Recherche, 39 quai Lucien Lefranc, 93303 Aubervilliers, France

^c Institut Lavoisier de Versailles, UMR 8180 UVSQ-CNRS, Université Paris Saclay, Versailles, France

Abstract

The wavelength used during photochemical grafting of alkene onto silicon related surfaces influences molecular surface coverage. Ultraviolet light leads to apparent highly dense layers on UV absorbing materials due to the side reaction between alkenes resulting in strongly physisorbed dimers whereas higher wavelengths lead to dense and well-controlled layers.

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Article information

DOI: https://doi.org/10.1039/C8CC03207F
Article type: Communication
Submitted: 20 Apr 2018
Accepted: 01 Jun 2018
First published: 04 Jun 2018

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Chem. Commun., 2018,54, 7167-7170

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The critical role of wavelength in the UV-activated grafting of 1-alkene onto silicon and silicon nitride Si_xN₄ surfaces

M. Brunet, D. Aureau, F. Guillemot, A. Etcheberry, F. Ozanam and A. C. Gouget-Laemmel, Chem. Commun., 2018, 54, 7167 DOI: 10.1039/C8CC03207F

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