Issue 13, 2018

Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Abstract

Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.

Graphical abstract: Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Supplementary files

Article information

Article type
Communication
Submitted
14 Dec 2017
Accepted
05 Feb 2018
First published
15 Feb 2018

CrystEngComm, 2018,20, 1774-1778

Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

K. Hasegawa, C. Takazawa, M. Fujita, S. Noda and M. Ihara, CrystEngComm, 2018, 20, 1774 DOI: 10.1039/C7CE02162C

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