Oxygen insensitive thiol–ene photo-click chemistry for direct imprint lithography of oxides

Abstract

UV-nanoimprint lithography (UV-NIL) is a promising technique for direct fabrication of functional oxide nanostructures. Since it is mostly carried out in aerobic conditions, the free radical polymerization during imprinting is retarded due to the radical scavenging ability of oxygen. Therefore, it is highly desirable to have an oxygen-insensitive photo-curable resin that not only alleviates the requirement of inert conditions but also enables patterning without making substantial changes in the process. Here we demonstrate the formulation of metal-containing resins that employ oxygen-insensitive thiol–ene photo-click chemistry. Allyl acetoacetate (AAAc) has been used as a bifunctional monomer that, on one hand, chelates with the metal ion, and on the other hand, offers a reactive alkene group for polymerization. Pentaerythritol tetrakis(3-mercaptopropionate) (PETMP), a four-arm thiol derivative, is used as a crosslinker as well as an active component in the thiol–ene photo-click chemistry. The FT-IR analyses on the metal-free and metal-containing resin formulations revealed that the optimum ratio of alkene to thiol is 1 : 0.5 for an efficient photo-click chemistry. The thiol–ene photo-click chemistry has been successfully demonstrated for direct imprinting of oxides by employing TiO₂ and Ta₂O₅ as candidate systems. The imprinted films of metal-containing resins were subjected to calcination to obtain the corresponding patterned metal oxides. This technique can potentially be expanded to other oxide systems as well.