Influence from defects of three-dimensional graphene networks on the interface condition between the graphene basal plane and various resins

Abstract

Graphene assisted thermal interface materials (TIMs) attract more and more attention because of their high thermal conductivities. However, how to improve the phonon transport ability at the interface between the graphene basal plane and the matrix is still unclear. In this study, three-dimensional graphene networks (3DGNs) with varying defect densities are fabricated by adjusting the chemical vapor deposition processes, and these specimens are adopted as fillers to modify various resins with different functional groups to reveal the interface contact rule. By optimizing the defect density of the 3DGNs, a synergy between the thermal boundary resistances of the filler and matrix and the high intrinsic thermal conductivity of the filler can be achieved in the resulting TIMs, and the epoxy group from the matrix is found to be the best active group to form a close contact between the defects of the 3DGNs. After that, the thermal performance stability of the resulting TIMs under a high temperature for a long time is detected, and the influence from increased Umklapp scattering is partially offset by the weakened Kapitza scattering. Moreover, the corresponding mechanical properties have been measured to confirm the feasibility of the resulting TIMs for practical application areas.