Modulation of bulk and surface electronic structures for oxygen evolution by Cr, P co-doped Co3S4

Yiting Chen; Xiaoyun Zhang; Xiaoshuang Ma; Yuqiao Wang

doi:10.1039/D3CC01936E

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Modulation of bulk and surface electronic structures for oxygen evolution by Cr, P co-doped Co₃S₄†

Yiting Chen,

‡^a Xiaoyun Zhang,

‡^a Xiaoshuang Ma

^a and Yuqiao Wang

*^a

Author affiliations

* Corresponding authors

^a Research Center for Photoelectrochemistry and Devices, School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
E-mail: yqwang@seu.edu.cn

Abstract

Co₃S₄ was doped by Cr in the bulk phase and P on the surface to achieve a low overpotential of 257 mV and a long-term durability over 48 h during the oxygen evolution reaction. This was caused by high-valence metal Cr and non-metal P atom doping enhanced conductivity and optimized adsorption energy of intermediates.

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Article information

DOI: https://doi.org/10.1039/D3CC01936E
Article type: Communication
Submitted: 20 Apr 2023
Accepted: 24 May 2023
First published: 25 May 2023

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Chem. Commun., 2023,59, 7775-7778

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Modulation of bulk and surface electronic structures for oxygen evolution by Cr, P co-doped Co₃S₄

Y. Chen, X. Zhang, X. Ma and Y. Wang, Chem. Commun., 2023, 59, 7775 DOI: 10.1039/D3CC01936E

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Chemical Communications