Issue 36, 2023

Molten salt-assisted synthesis of bismuth nanosheets with long-term cyclability at high rates for sodium-ion batteries

Abstract

Bismuth is a promising anode material for sodium-ion batteries (SIBs) due to its high capacity and suitable working potential. However, the large volume change during alloying/dealloying would lead to poor cycling performance. Herein, we have constructed a 3D hierarchical structure assembled by bismuth nanosheets, addressing the challenges of fast kinetics, and providing efficient stress and strain relief room. The uniform bismuth nanosheets are prepared via a molten salt-assisted aluminum thermal reduction method. Compared with the commercial bismuth powder, the bismuth nanosheets present a larger specific surface area and interlayer spacing, which is beneficial for sodium ion insertion and release. As a result, the bismuth nanosheet anode presents excellent sodium storage properties with an ultralong cycle life of 6500 cycles at a high current density of 10 A g−1, and an excellent capacity retention of 87% at an ultrahigh current rate of 30 A g−1. Moreover, the full SIBs that paired with the Na3V2(PO4)3/rGO cathode exhibited excellent performance. This work not only presents a novel strategy for preparing bismuth nanosheets with significantly increased interlayer spacing but also offers a straightforward synthesis method utilizing low-cost precursors. Furthermore, the outstanding performance demonstrated by these nanosheets indicates their potential for various practical applications.

Graphical abstract: Molten salt-assisted synthesis of bismuth nanosheets with long-term cyclability at high rates for sodium-ion batteries

Supplementary files

Article information

Article type
Paper
Submitted
05 Jun 2023
Accepted
04 Aug 2023
First published
25 Aug 2023
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2023,13, 25552-25560

Molten salt-assisted synthesis of bismuth nanosheets with long-term cyclability at high rates for sodium-ion batteries

K. Hu, Y. Chen, C. Zheng, X. Du, M. Wang, Q. Yao, H. Wang, K. Fan, W. Wang, X. Yan, N. Wang, Z. Bai and S. Dou, RSC Adv., 2023, 13, 25552 DOI: 10.1039/D3RA03767C

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