Tunable synaptic behaviors of solution-processed InGaO films for artificial visual systems

Abstract

Due to their persistent photoconductivity, amorphous metal oxide thin films are promising for construction of artificial visual systems. In this work, large-scale, uniformly distributed amorphous InGaO thin films with an adjustable In/Ga ratio and thickness are prepared successfully by a low-cost environmentally friendly and easy-to-handle solution process for constructing artificial visual systems. With the increase of the In/Ga ratio and film thickness, the number of oxygen vacancies increases, along with the increase of post-synaptic current triggered by illumination, benefiting the transition of short-term plasticity to long-term plasticity. With an optimal In/Ga ratio and film thickness, the conductance response difference at a decay of 0 s between the 1st and the 10th views of a 5 × 5 array InGaO thin film transistor is up to 2.88 μA, along with an increase in the I_decay 30s/I_decay 0s ratio from 45.24% to 53.24%, resulting in a high image clarity and non-volatile artificial visual memory. Furthermore, a three-layer artificial vision network is constructed to evaluate the image recognition capability, exhibiting an accuracy of up to 91.32%. All results promise low-cost and easy-to-handle amorphous InGaO thin films for future visual information processing and image recognition.