Issue 44, 2024

Parylene-MoOx crossbar memristors as a volatile reservoir and non-volatile readout: a homogeneous reservoir computing system

Abstract

From the very beginning, the emulation of biological principles has been the primary avenue for the development of energy-efficient artificial intelligence systems. Reservoir computing, which has a solid biological basis, is particularly appealing due to its simplicity and efficiency. So-called memristors, resistive switching elements with complex dynamics, have proved beneficial for replicating both principal parts of a reservoir computing system. However, these parts require distinct behaviors found in differing memristive structures. The development of a homogeneous memristive reservoir computing system will significantly facilitate and reduce the fabrication process cost. The following work employs the co-existence of volatile and non-volatile regimes in parylene-MoOx crossbar memristors controlled by compliance current for this aim. The stable operation of the memristors under study is confirmed by low cycle-to-cycle and device-to-device variations of the switching voltages. For the transition between the volatile and non-volatile regimes, factors such as compliance current and reading voltage along with possible intrinsic origins are discussed. The results provide a foundation for the future hardware development of a homogeneous parylene-based reservoir computing system, considering high MNIST dataset classification accuracy (∼96%).

Graphical abstract: Parylene-MoOx crossbar memristors as a volatile reservoir and non-volatile readout: a homogeneous reservoir computing system

Supplementary files

Article information

Article type
Paper
Submitted
16 Aug 2024
Accepted
06 Oct 2024
First published
07 Oct 2024

Nanoscale, 2024,16, 20628-20636

Parylene-MoOx crossbar memristors as a volatile reservoir and non-volatile readout: a homogeneous reservoir computing system

M. A. Ryabova, A. N. Matsukatova, A. V. Emelyanov, A. A. Nesmelov, T. D. Patsaev and V. A. Demin, Nanoscale, 2024, 16, 20628 DOI: 10.1039/D4NR03368J

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