Yifeng
Zhang
a,
Fang
Mao
a,
Hongjian
Yan
*b,
Kewei
Liu
b,
Hongmei
Cao
b,
Jiagang
Wu
a and
Dingquan
Xiao
*a
aCollege of Materials Science and Engineering, Sichuan University, 610064, P. R. China. E-mail: nic0402@scu.edu.cn; Fax: +86-28-85416050; Tel: +86-28-85412415
bCollege of Chemistry, Sichuan University, Chengdu, 610064, P. R. China. E-mail: hjyan@scu.edu.cn; Fax: +86 2885221339; Tel: +86 13551341892
First published on 4th November 2014
The tightly coupled heterostructure g-C3N4/Au/poly(3-hexylthiophene) (P3HT)/Pt was successfully prepared by a self-assembling method. The heterojunction photocatalyst displayed high activity for hydrogen production from water which contains triethanolamine as an electron donor under visible light irradiation. The samples were characterized by X-ray diffraction (XRD), UV-visible spectroscopy, photoluminescence (PL) spectra analysis and transmission electron microscopy (TEM). The experimental results demonstrated that the g-C3N4/Au/P3HT/Pt structure was conducive to the efficient separation of photo-generated electron–hole pairs, which can be explained by the strong junction of chemical bond between Au and P3HT. The effect of P3HT content on the activity of the photocatalysts was investigated with a series of g-C3N4/Au/P3HT heterostructure samples loaded with Pt as a cocatalyst in triethanolamine aqueous solutions. The optimal P3HT content was determined to be 0.5 wt%, and the corresponding hydrogen evolution rate was 320 μmol h−1.
Since Fujishima and Honda found that TiO2 can cause cleavage of water under ultraviolet light,3 metal-based inorganic materials (including metal oxides, metal (oxy)nitrides, and metal oxysulfides) have occupied the field of photocatalysis with absolute dominance.4 Although these inorganic materials have led to remarkable achievements in this field, noble or rare elements are the main constituents of the metal-based complexes.5 Seeking green, sustainable and inexpensive photocatalysts made of abundant elements that we can obtain conveniently on the earth is significant for the utilization of solar energy in practical application. Therefore, organic photocatalysts for artificial photosynthesis have been developed to explore more economical and environmentally friendly methods. Recently, the polymeric organic semiconductor g-C3N4 has shown the ability of water splitting for hydrogen production under visible light.6 The utilization of polymeric organic semiconductors, which are cheap and easily available materials, opens up a new prospect to construct highly efficient and economical photocatalysis systems. However, the g-C3N4 photocatalysts suffer from many problems, such as high excitation dissociation energy, low charge mobility, low specific surface area, insufficient visible photon absorption and high level of the top of the valance band.7 In order to boost the photocatalytic efficiency of g-C3N4, several strategies, such as new synthesis methods,8–15 doping with metal or non-metal elements,16,17 dye sensitization,18,19 surface modification20–22 and construction of complexes based on g-C3N4,23–30 have been developed. These methods have proved to be effective for the promotion of the photocatalytic activity of g-C3N4.
In our previous work, the physical adsorption of poly(3-hexylthiophene) (P3HT) on the surface of g-C3N4 was achieved by evaporation of the solvent using a water bath.29 However, g-C3N4 with P3HT cannot be intimately combined because of the weak van der Waals force. This could reduce the photo-generated electron transfer efficiency between P3HT and g-C3N4. Herein, we adopted chemical bonding to ensure the tight conjunction between g-C3N4 and P3HT. Using chemical adsorption instead of physical adsorption can solve the separation problem of g-C3N4 and P3HT, and therefore we can realize the cyclic utilization of catalysts. The formation of a tight g-C3N4/Au heterojunction was obtained by the photodeposition method. In addition, 0.5 wt% Pt was loaded on the P3HT as a co-catalyst to provide chemical reactivity or active sites for H2 evolution, and improve the photocatalytic activity of catalysts.20 To the best of our knowledge, this is the first time of fabricating a polymer–metal–polymer–metal heterostructure for photocatalytic water splitting.
Preparation of g-C3N4: the g-C3N4 was synthesized via a soft-templating method by using Pluronic P123 surfactant as soft template.12 Pluronic P123 (5.0 g) and melamine (25.0 g) were dispersed in distilled water (500 mL) successively and heated at 100 °C for 1 h under magnetic stirring. Then sulfuric acid solution (10 mL, H2SO4:H2O = 1:1 v/v) was slowly added into the solution, and a white precipitate was produced. After cooling down to room temperature, the precipitate was collected by filtration. After drying in an oven at 80 °C overnight, the precipitate was heated from room temperature to 380 °C in 5 minutes and then to 600 °C at a heating rate of 1 °C min−1 and then maintained at 600 °C for 4 hours in a muffle furnace in a flow of Ar gas. After the reaction, the product was cooled down to room temperature in a flow of Ar gas. Finally, the product was then calcined at 500 °C for 2 h in air.
The loading of 1 wt% Au on g-C3N4: g-C3N4 (1 g) was dispersed in 200 mL of 10% (v/v) TEA solution containing a certain amount of HAuCl4 solution. After evacuating the air completely, the mixture was irradiated with a Xe lamp (300 W) for 30 minutes at room temperature. After irradiation, the sample was collected by filtration and then dried at 60 °C in an oven overnight.
Preparation of g-C3N4/Au/P3HT/Pt: P3HT/Pt was prepared by a photoreduction method. Typically, chloroplatinic acid (0.5 mg), P3HT (0.5 mg) and isopropyl alcohol (0.2 mL) were dissolved in THF (16 mL). The solution was irradiated by a Xe lamp (300 W) for 30 minutes at room temperature. Then, 0.1 g g-C3N4/Au was added to the solution. The solution was stirred at room temperature for 2 hours in the dark. The slurry was filtered and washed with THF, acetone and 10% TEA sequentially. Then the photocatalyst was transferred to the reaction cell for photocatalytic reaction tests.
TEM was used to study the morphology and microstructures of g-C3N4, g-C3N4/Au, P3HT/Pt, and the heterostructure g-C3N4/Au/P3HT/Pt. As shown in Fig. 2(a), g-C3N4 has a layer structure and is a thin sheet with irregular morphology. Fig. 2(b) shows that the regularly shaped spherical Au nanoparticles with size of 3–5 nm were uniformly loaded on the surface of g-C3N4. The Au lattice fringes were distinctly observed as shown in the insert in Fig. 2(b). The distance of ten layers of the Au crystallites is determined as 2.35 nm (or 0.235 nm per lattice space), corresponding to the (1 1 1) crystallographic planes of cubic Au (JCPDS 04-0784). The morphology of P3HT/Pt was also investigated by TEM, as shown in Fig. 2(c). P3HT has a chain structure curled like irregular rings. The size of Pt nanoparticles is 3–5 nm as shown in the inset in Fig. 2(c). The distance of 10 layers of lattice spaces of Pt crystallite is determined as 2.26 nm (or 0.226 nm per interplanar spacing, inset in Fig. 2(c)), which matches the (1 1 1) crystallographic plane of Pt (JCPDS 04-0802). These results indicated that the two metal–polymer semiconductor heterojunction structures (g-C3N4/Au and P3HT/Pt) were indeed formed. Fig. 2(d) shows a TEM image of g-C3N4/Au/P3HT/Pt. The unobvious image contrast between g-C3N4 and P3HT may lead to us not being able to distinguish the two polymer semiconductors with TEM or even with HRTEM. Therefore, it is difficult to confirm the Au–P3HT heterostructure in g-C3N4/Au/P3HT/Pt by using TEM.
To confirm the formation of Au–P3HT heterostructure in g-C3N4/Au/P3HT/Pt, XPS was applied for elemental analysis and valence state analysis of the samples. As expected, in the sample of g-C3N4/Au/P3HT/Pt, the peak at binding energy of 163.85 eV for S 2p was observed (Fig. 3(a)). The observed sulfur signal suggested that P3HT exists in the sample of g-C3N4/Au/P3HT/Pt because of the component parts of the heterostructure only P3HT contains S element. The high-resolution Au 4f XPS spectra of g-C3N4/Au and g-C3N4/Au/P3HT/Pt are shown in Fig. 3(b). The Au 4f spectra consist of two peaks due to the electron spin. The binding energy of Au 4f5/2 and Au 4f7/2 for g-C3N4/Au was found at around 83.26 and 86.94 eV, respectively. However, the binding energy of Au 4f5/2 and Au 4f7/2 for g-C3N4/Au/P3HT/Pt was found at around 83.35 and 87.03 eV, respectively. There is about 0.09 eV shift towards high binding energy. This shift indicated the chemical state of Au loaded on the g-C3N4 changed after mixing g-C3N4/Au with P3HT/Pt. In consideration of the results of XPS, the experimental method and the Au–S bond formed between S element in the organics and Au,32,33 we speculated that P3HT/Pt was successfully integrated with g-C3N4/Au and this combination was due to the formation of Au–S bond between Au on the g-C3N4 and S in the P3HT. It is the formation of these Au–S bonds that led the Au 4f spectral peaks of g-C3N4/Au/P3HT/Pt to shift towards high binding energy.
Fig. 3 The high-resolution XPS spectra of (a) S 2p for g-C3N4/Au/P3HT/Pt and (b) Au 4f for g-C3N4/Au and g-C3N4/Au/P3HT/Pt. |
Fig. 4 UV-visible diffuse reflectance spectra (DRS) of (a) g-C3N4, (b) g-C3N4/Au, and (c) g-C3N4/Au/P3HT/Pt. |
PL spectral analysis was used to study the transfer and recombination processes of photogenerated electron–hole pairs in the photocatalysts. Fig. 5 shows the PL spectra of pure g-C3N4, g-C3N4/Au and g-C3N4/Au/P3HT/Pt under incident light with a wavelength of 279 nm. All PL spectra of the samples have the same major peak at 457 nm, which could be attributed to the recombination of photoexcited electron–hole in g-C3N4 with a band gap at 2.7 eV. Significant PL quenching was observed in g-C3N4/Au and g-C3N4/Au/P3HT/Pt. The quenching of g-C3N4/Au could be attributed to electron migration from g-C3N4 to the Au particles, which was more conducive to the photoreduction of H+ to H2. Compared to g-C3N4, nearly 75% PL quenching was observed in the sample of g-C3N4/Au/P3HT/Pt, indicating that the g-C3N4/Au/P3HT/Pt photocatalyst has a lower recombination of the photogenerated electron–hole pairs and more efficient charge transfer between g-C3N4 and P3HT due to the tight conjunction between them.
Fig. 5 Photoluminescence (PL) emission spectra of (a) g-C3N4, (b) Au-loaded g-C3N4, and (c) g-C3N4/Au/P3HT/Pt heterostructure. The excitation wavelength was 279 nm. |
Fig. 7 shows the H2 evolution rate on g-C3N4/Au/P3HT/Pt with different amounts of P3HT. As shown in Fig. 7, with an increase of the amount of P3HT, the photocatalytic H2 evolution rate increases first and reaches a maximum of 320 μmol h−1 when the amount of P3HT is about 0.5 wt%. However, further increasing the amount of P3HT leads to a decrease of the photocatalytic H2 evolution.
Fig. 7 The rate of H2 evolution on g-C3N4/Au/P3HT/Pt polymer composites with different amounts of P3HT under visible light (λ > 420 nm). |
The mechanism of photocatalysis is shown in Scheme 1. Here we apply the metal–semiconductor contact theory and the Fermi level equilibration principle involving the Schottky–Mott limit demonstrated by Tang and Slyke34 and the metal–organic interface proposed by Kahn et al.35 to explain the photocatalysis mechanism of g-C3N4/Au/P3HT/Pt. The charge distribution leads to Fermi level equilibration in the metal–semiconductor system, so we can assume a quasi-Fermi level (E*F) in g-C3N4/Au/P3HT/Pt. The property of storing electrons in a quantized fashion in Au nanoparticles36,37 leads to the shift of the Fermi level of Au towards more negative potential. This may result in the Fermi level of the composite shifting closer to the conduction band of the semiconductor in the ZnO/Au system or TiO2/Au system.38,39 In the g-C3N4/Au system, the upward shift of the Fermi level (EF) of the composite to the quasi-Fermi level (E*F) in Scheme 1 has been used for reference and the photocatalytic performance of g-C3N4 improves due to the efficiency of interfacial charge-transfer process.20
On the other hand, the high work function of Au leads to small hole injection barriers (HIBs) at the metal–organic interface and it often was chosen as an electrode for hole injection.40 The HIB is defined as the energy difference between the metal Fermi level (EF) and the hole transport level in the organic semiconductor. In this scheme, the highest occupied molecular orbital (HOMO) can be regarded as the hole transport level in P3HT. However, contaminated Au surface work function values spanned the range between 4.7 and 5.1 eV and may even be larger when considering different environments.41 The HOMO of P3HT (π-conjugated polymer) was determined as 5.1 eV or 4.9 eV (bulk42,43), 4.3 eV (film44), 4.0 eV (a single strand45). If we neglect the effect of interface dipoles (IDs), admitting that the Au–S bond was indeed formed between Au and P3HT, the values of Au surface work function and the HOMO of P3HT were so close that the HIB of the interface between the P3HT and Au was very low and even forms an ohmic contact.46 The low potential barrier or ohmic contact of P3HT/Au favors charge carrier injection into each other. The holes, which transport through the P3HT network (good hole-transport material),47 will be collected at the Au surface.
In our research, however, the formation of the Au–S bond was confirmed by XPS. Therefore, the energy level alignment in reactive interfaces is controlled by chemistry-induced electronic states.37 The chemical reaction to form Au–S bonds leads to the formation of gap states and pinning of EF at the interface. Just consider the interface of P3HT/Au: if the Au work function falls in the P3HT gap, the gap states pinning EF2 lie in the upper part of the gap and increase the HIB,48 while the contaminated Au has a larger work function, and the large surface dipole of Au work function also leads to a large interface dipole barrier.35 The large HIB results in low hole transfer and reduces the photocatalytic efficiency. The HIB of P3HT/Au was determined as 0.59 eV (ref. 49) or even smaller at 0.35 eV,40 because of the different preparative approaches or the presence of ambient contamination at the Au interfaces.41
Naturally, the interface charge-transfer of g-C3N4/Au and the chemical bond of P3HT/Au or other unforeseen mechanisms, like molecule-induced modification of the metal work function, contribute to the IDs and affect each other. This becomes more complex and difficult to differentiate between the various contributions.35
In our experiment, by comparing the rate of photocatalytic H2 evolution on g-C3N4/Au and g-C3N4/Au/P3HT, it is concluded that the effective electrons on the Au surface were consumed and that the P3HT “grabbed” the electrons on the Au surface through the way that provides holes to Au surface. This means the interface of P3HT/Au realized hole transport from P3HT to the Au surface. This led us to suspect a low potential barrier had been formed at the P3HT/Au interface for the injection of charge carriers into each other. The recombination of electrons generated in g-C3N4 with the holes from the HOMO level of P3HT on the Au nanoparticle surface promoted the efficient dissociation of electron–hole pairs generated in the two kinds of polymer semiconductors. The excited electrons in P3HT transferred to the Pt and achieved the reduction of H+ to H2. The g-C3N4 got the compensation of electrons through the oxidation of TEA to TEA+. The recombination process of electrons and holes on the Au surface and the dissociation process of photo-generated electron–hole pairs in g-C3N4 and P3HT greatly enhanced the overall photocatalytic efficiency. The platinum metal introduced an ohmic contact that provided a quick transfer of electrons to the electrolyte.38 This resulted in the Fermi energy of Pt remaining close to the solution redox level and had a negligible effect on the Fermi level of the semiconductor.
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