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DOI: 10.1039/C8RA90075B
(Correction)
RSC Adv., 2018, 8, 31984-31984
Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition
Y.-R. Jo,
S.-H. Myeong and
B.-J. Kim*
School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju, Korea. E-mail: kimbj@gist.ac.kr; Tel: +82-062-715-2341
Received
6th September 2018
, Accepted 6th September 2018
First published on 13th September 2018
Abstract
Correction for ‘Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition’ by Y.-R. Jo et al., RSC Adv., 2018, 8, 5158–5165.
The authors regret that one of the funders was omitted from the acknowledgements in the original article. The full acknowledgements should read: “This work was supported by the Samsung Research Funding Center of Samsung Electronics under Project Number SRFC-MA1402-10 and the National Research Foundation of Korea (NRF) under Grant NRF2013S1A2A2035468.”
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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