Riza Ariyani Nur Khasanaha,
Hui-Ching Lina,
Hsiang-Yun Hob,
Yen-Ping Pengc,
Tsong-Shin Lima,
Hsi-Lien Hsiaoa,
Chang-Ren Wanga,
Min-Chieh Chuangd and
Forest Shih-Sen Chien*a
aDepartment of Applied Physics, Tunghai University, Taichung 407224, Taiwan. E-mail: fsschien@thu.edu.tw
bDepartment of Environmental Science and Engineering, Tunghai University, Taichung 407224, Taiwan
cInstitute of Environmental Engineering, National Sun Yat-sen University, Kaoshiung 804, Taiwan
dDepartment of Chemistry, Tunghai University, Taichung 407224, Taiwan
First published on 26th January 2021
Cu2O is a promising material for photocatalysis because of its absorption ability in the ultraviolet (UV)-visible light range. Cu2O deposited on conductive Ti and fluorine-doped tin oxide (FTO) substrates behaves as a photocathode. Cu2O deposited on an n-type semiconductor such as TiO2 nanotube arrays (TNA)/Ti behaves as a photoanode and has demonstrated better photocatalytic activity than that of TNA/Ti. The substrate-dependent photocatalytic properties of Cu2O heterojunctions are not well studied. In this work, the photocatalytic properties of a Cu2O/TNA/Ti junction as a photoanode and of Cu2O/Ti and Cu2O/FTO junctions as photocathodes without bias were systematically studied to understand their performance. The Cu2O/TNA/Ti photoanode exhibited higher photocurrent spectral responses than those of Cu2O/Ti and Cu2O/FTO photocathodes. The photoanodic/photocathodic properties of those junctions were depicted in their energy band diagrams. Time-resolved photoluminescence indicated that Cu2O/TNA/Ti, Cu2O/Ti, and Cu2O/FTO junctions did not enhance the separation of photogenerated charges. The improved photocatalytic properties of Cu2O/TNA/Ti compared with TNA/Ti were mainly attributed to the UV-visible light absorption of Cu2O.
To further advance this promising photocatalytic material, Cu2O has been used as top layers on various n-type metal oxide semiconductors, such as TiO2,15 ZnO,16 WO,3,17 and g-C3N4,18 to form heterojunctions and enhance photogenerated charge separation. These junctions demonstrate better photocatalytic activity than that of bare Cu2O. Cu2O combined with TiO2 is an attractive composite because of its matching energy-level alignments that thermodynamically promoting the transfer of photogenerated electrons from Cu2O to TiO2.19 TiO2 is the most popular n-type metal oxide semiconductor in photocatalysis, that has a wide band gap energy (approximately 3.0 eV for rutile20 and 3.2 eV for anatase21) and several beneficial characteristics, such as chemical stability, corrosion resistance, environmental friendliness, abundance, and cost effectiveness.22 However, the solar energy conversion efficiency of TiO2 is limited by UV light absorption. To date, TiO2 nanotube arrays (TNA)/Ti has been favoured because of its higher surface-area-to-volume ratio.23,24 Cu2O electrodeposited on TNA/Ti (Cu2O/TNA/Ti) has been applied in the photocatalytic degradation of pollutants, such as methyl orange (dye),25 CO2 (gas),26 ibuprofen (drug),27,28 and ciprofloxacin (drug).29 To this end, Cu2O/TNA/Ti is more effective than TNA/Ti. Contrary to the Cu2O-functionalized conductive substrates, which are utilized as photocathodes, Cu2O/TNA/Ti frequently acts as a photoanode. However, the substrate-dependent photocatalytic properties of p-Cu2O heterojunctions are not well studied, and the heterojunctions are a critical issue in photocatalysis. Moreover, the Cu2O/TNA heterojunction is very important for photocatalysis. It is considered that the heterojunction enhance the separation of photogenerated charges.25–29 In fact, the enhancement of the charge separation at Cu2O/TNA junction to assist in photocatalysis has yet to be verified.
In this study, the photocatalytic properties of Cu2O/TNA/Ti were compared with those of Cu2O/Ti and Cu2O/FTO. A p-Cu2O was deposited on different substrates, i.e., n-TNA/Ti, Ti, and n-FTO. The results revealed that the Cu2O/TNA/Ti photoanode exhibited higher photocurrent spectral responses, which obviously outperformed the Cu2O/Ti and Cu2O/FTO photocathodes. The photoanodic current of Cu2O/TNA/Ti was twice as high as that of TNA/Ti. The higher photocatalytic performance of Cu2O/TNA/Ti over other junctions was verified by the degradation of rhodamine 6G (R6G). The results of time-resolved photoluminescence (TRPL) for both the TNA and Cu2O sides of Cu2O/TNA/Ti revealed that the junction of Cu2O/TNA did not enhance the charge separation. Both Cu2O/Ti and Cu2O/FTO did not enhance the charge separation from TRPL measurement, either. The improved photocatalytic properties of the Cu2O/TNA/Ti over TNA/Ti alone were mainly ascribed to the UV-visible light absorption of Cu2O.
Fig. 1 Top-view scanning electron microscopy (SEM) images of (a) TNA/Ti, (b) Cu2O/TNA/Ti, (c) Cu2O/Ti, and (d) Cu2O/FTO. The inset in (a) is the cross-sectional SEM image of TNA/Ti. |
The X-ray diffraction (XRD) patterns in Fig. 2(a) display peaks confirming the presence of Ti, TNA, Cu2O, and FTO. The TNA/Ti and Cu2O/TNA/Ti had peaks with 2θ values of 25.34°, 37.98°, 48.10°, and 54.10°, which were indexed to the (101), (004), (200), and (105) crystal planes of anatase TiO2 (ICSD file no. 98-007-6028), respectively. Two peaks with 2θ values of 36.58° and 42.29°, observed on Cu2O/TNA/Ti, Cu2O/Ti, and Cu2O/FTO, were indexed to the (111) and (200) crystal planes of Cu2O (ICSD file no. 98-006-0719), respectively. No Cu or CuO peaks were observed in Cu2O/TNA/Ti, Cu2O/Ti, or Cu2O/FTO, indicating that only Cu2O was grown in the substrates. For comparison, the morphology and XRD pattern of the commercial Cu2O are also presented in Fig. S1.† The optical absorption spectra of TNA/Ti, Cu2O/TNA/Ti, Cu2O/Ti, and Cu2O/FTO are shown in Fig. 2(b). TNA/Ti demonstrated high absorption in the UV region, with an approximate band gap energy of 3.35 eV (370 nm), which is consistent with the anatase phase.31 Broad light scattering of TNA/Ti caused by its specific structure was observed in the visible region.32 Cu2O/TNA/Ti, Cu2O/Ti, and Cu2O/FTO all demonstrated a visible light absorption edge at 500 nm due to the band gap of Cu2O (2.47 eV), which is consistent with values reported in other studies.1,2 The additional absorption edge at 560 nm observed in Cu2O/Ti is attributable to the absorption characteristics of Ti. The absorption characteristics of Cu2O/FTO were obtained through measurement of the reflection and transmission spectra, as shown in Fig. S2.† The optical absorption of the commercial Cu2O is shown in Fig. S3.†
Fig. 3 Spectral responses of TNA/Ti, Cu2O/TNA/Ti, Cu2O/Ti, and Cu2O/FTO. The inset is the enlarge graph to see the onset response of Cu2O/Ti and Cu2O/FTO. |
The photocurrent density was measured under a solar simulator. Under dark conditions, both Cu2O/TNA/Ti and TNA/Ti exhibited no current density. Under solar light (λ > 350 nm), Cu2O/TNA displayed a photocurrent density of 27 μA cm−2, approximately twice that of TNA/Ti (15 μA cm−2) [Fig. 4(a)]. Under visible light (λ > 400 nm), Cu2O/TNA/Ti demonstrated a photocurrent density of 14 μA cm−2, whereas TNA/Ti had a low photocurrent density (2 μA cm−2) [Fig. 4(b)]. Fig. 4(c) presents the photovoltage obtained from the open-circuit potential (OCP) vs. Ag/AgCl, which is directly related to the photocurrent. Under dark conditions, the OCPs of TNA/Ti and Cu2O/TNA/Ti were 0.1 V vs. Ag/AgCl. Subsequently, a negative photovoltage was observed when the working electrode was illuminated by solar light. A negative photovoltage indicates that electrons accumulated in the electrodes, denoting a photoanode. Cu2O/TNA/Ti had a more negative photovoltage (−0.17 V vs. Ag/AgCl) compared with that of TNA/Ti (−0.13 V vs. Ag/AgCl), indicating that a greater number of electrons accumulated in the Cu2O/TNA/Ti upon illumination. The photocurrent densities of Cu2O/Ti and Cu2O/FTO under solar light in Fig. 4(d) and visible light in Fig. 4(e) demonstrate the typical behaviour of p-type semiconductors to be photocathodes. The photocurrent densities of Cu2O/Ti and Cu2O/FTO under solar light were approximately −3.0 μA cm−2 and −4.0 μA cm−2, respectively. Under visible light, Cu2O/Ti and Cu2O/FTO exhibited photocurrent densities of −2.4 μA cm−2 and −3.1 μA cm−2, respectively. Fig. 4(f) shows OCPs vs. Ag/AgCl under solar light, which fluctuated between 0.05 V and 0.08 V and between 0.04 V and 0.09 V for Cu2O/Ti and Cu2O/FTO, respectively. The positive photovoltages suggest that holes accumulated in the working electrodes.
The photocatalytic activity of Cu2O/TNA/Ti, Cu2O/Ti, Cu2O/FTO, and TNA/Ti was evaluated though the degradation of R6G under solar light without bias through monitoring of the change in height of the absorption peak at a wavelength of 527 nm.33 R6G was degraded through photooxidation process. Fig. 5(a) shows the decrease of the absorption spectra of R6G degraded by the photocatalysis with Cu2O/TNA/Ti. Fig. 5(b) presents the photocatalytic degradation in the R6G concentration with different working electrodes. Cu2O/TNA/Ti could degrade R6G by approximately 55% in 120 min. However, TNA/Ti, Cu2O/Ti, and Cu2O/FTO demonstrated smaller degradation effects on R6G than that of Cu2O/TNA/Ti, with approximate degradation percentages of 30%, 26%, and 25%, respectively. Hence, the photooxidation of R6G is favourable with the Cu2O/TNA/Ti photoelectrode.
Fig. 5 (a) Decrement of the R6G absorption peak by Cu2O/TNA/Ti under solar light. (b) Degradation of the R6G concentration (C/C0) by Cu2O/TNA/Ti, Cu2O/Ti, Cu2O/FTO, and TNA/Ti under solar light. |
Fig. 6 Energy band diagrams involving (a) TNA/Ti, (b) Cu2O/TNA/Ti, (c) Cu2O/Ti, and (d) Cu2O/FTO in the Na2SO4 0.05 M electrolyte upon light illumination without applied bias. |
Cu2O/Ti formed a Schottky junction with a built-in potential (Vbi) of approximately 0.45 V,34 as displayed in Fig. 6(c). When Cu2O absorbed UV-visible light, a photocathodic current was observed because the photogenerated holes were easily transferred to the Ti back contact, and the photogenerated electrons were transferred to the Na2SO4 electrolyte. Furthermore, FTO is an n-type degenerate semiconductor, but behaves like a metal14 and has a Fermi level above the conduction band,35 as indicated in Fig. 6(d). The work function of Cu2O is a little lower than that of FTO. At equilibrium state, Cu2O/FTO created a broken-gap (type III) junction, yielding a band bending that demonstrated an ohmic contact36 for hole transfer and a small barrier for electron transfer to FTO with a built-in potential (Vbi) of approximately 0.15 V. Similar to the case for Cu2O/Ti, the photogenerated holes of Cu2O were transferred to the conduction band of FTO and further transferred to Pt through an external circuit, whereas the photogenerated electrons were transferred to the Na2SO4 electrolyte. Hence, a photocathodic current was observed.
The commercial Cu2O, bare TNA/Ti, Cu2O/TNA/Ti, Cu2O/Ti, and Cu2O/FTO samples were excited by a 355 nm pulse laser under a long-pass filter (λ > 480 nm) and integration time of 1 s at room temperature to measure the PL, as shown in Fig. 7(a and b). Commercial Cu2O exhibited PL peaks located at 620 nm and 900 nm, which is attributable to the band-to-band transition of Cu2O and the defect states of copper vacancies.37,38 TNA/Ti exhibited broad band PL with a peak located at 600 nm, which is consistent with the reports of other studies.39,40 No PL of the band-to-band transition of TNA was observed because TNA is an indirect band gap semiconductor.39 The 500 nm and 600 nm broad band PL of TNA originated from surface oxygen vacancies and subsurface oxygen vacancies, respectively.40 The PL of TNA and Cu2O in the Cu2O/TNA/Ti sample was captured from the TNA and Cu2O sides (an integration time of 30 s was used to measure the PL of the Cu2O side because of the weak intensity). The Cu2O side of Cu2O/TNA/Ti, Cu2O/Ti, and Cu2O/FTO exhibited a broad band PL peak at 600 nm, mainly caused by band-to-band emission. Cu2O also had defects due to oxygen vacancies with +2 and +1 charge states at 770 nm and 825 nm, respectively, and copper vacancies at 900 nm.38 The TNA side demonstrated similar PL emission to that of bare TNA/Ti.
The charge dynamics of the photogenerated charges was further studied by TRPL. Fig. 7(c) shows the TRPL of commercial Cu2O, Cu2O side of Cu2O/TNA/Ti, Cu2O/Ti, and Cu2O/FTO under a band-pass filter (600 nm ± 45 nm) because only the band-to-band transition of Cu2O was considered. Fig. 7(d) shows the TRPL of defect states in bare TNA/Ti and on the TNA side of Cu2O/TNA/Ti under a long-pass filter (λ > 480 nm). The TRPL results were fitted by a one-exponential-decay function for commercial Cu2O, Cu2O side of Cu2O/TNA/Ti, Cu2O/Ti, and Cu2O/FTO, and a two-exponential-decay function for bare TNA/Ti and TNA side of Cu2O/TNA/Ti, where τ1 and τ2 are the lifetimes of charge carriers along with the corresponding amplitudes, A1 and A2. The fitted results are summarized in Table 1. There is no significant difference of charge carrier lifetimes among commercial Cu2O (0.38 ns), Cu2O side of Cu2O/TNA/Ti (0.36 ns), Cu2O/Ti (0.31 ns), and Cu2O/FTO (0.33 ns), and between TNA/Ti (0.88 ns) and TNA side of Cu2O/TNA/Ti (0.86 ns). Thus, the Cu2O/TNA junction did not enhance the charge separation of photogenerated charges on the Cu2O or TNA sides. Therefore, no charge separation enhancement was observed at the Cu2O/TNA junction, which could be attributed to a poor contact area and poor quality of the Cu2O/TNA.
TRPL | Cu2O side | TNA side | ||||
---|---|---|---|---|---|---|
Sample/parameter | Commercial Cu2O | Cu2O/TNA/Ti | Cu2O/Ti | Cu2O/FTO | TNA/Ti | Cu2O/TNA/Ti |
A1 | 0.98 | 0.97 | 0.97 | 0.99 | 0.66 | 0.84 |
τ1 (ns) | 0.38 | 0.36 | 0.31 | 0.33 | 0.88 | 0.86 |
A2 | 0.35 | 0.23 | ||||
τ2 (ns) | 5.24 | 5.90 |
Inevitably, the contact area between the three-dimensional structures of TNA and the octahedral crystal grains of Cu2O prepared by square wave voltammetry electrochemical (SWVE) was remarkably small. The grain size of Cu2O was larger than the outer diameter of the TNA, as seen in Fig. 1(b). Such large grains of Cu2O were due to the high growth rate of Cu2O and resulted in the low contact area and low coverage at Cu2O/TNA junction. In addition the high growth rate could lead to poor junction quality. To improve the Cu2O/TNA junction, we suggest a lower growth rate of Cu2O by adjusting the scan rate in the SWVE method to allow better nucleation and grow smaller grains of Cu2O. As a result, the contact area and coverage of Cu2O/TNA increase, and the quality of Cu2O/TNA junction is improved. Therefore, the Cu2O/TNA junction exhibiting better photocatalytic properties than those of TNA is only attributable to the absorption of Cu2O, not to charge separation enhancement at the Cu2O/TNA junction. In addition, the PL at 500–600 nm related to the oxygen vacancies indicated that the quality of the electrochemical-anodized TNA was unsuitable for the formation of a high-quality junction. Other types of TiO2, such as sputtered TiO2 and porous TiO2, could be better candidates for the formation of high-quality Cu2O/TiO2 junctions and assist the separation of photogenerated charges. No charge separation enhancement was observed at the Cu2O/Ti and Cu2O/FTO junctions, because the built-in potential is not favourable to the drift of photogenerated holes toward Ti and electrons toward FTO, respectively.
Fig. 8 Schematics of the photocatalytic measurement under a two-electrode setup for (a) photocurrent intensity without bias and (b) OCP vs. Ag/AgCl. |
Footnote |
† Electronic supplementary information (ESI) available. See DOI: 10.1039/d0ra10681j |
This journal is © The Royal Society of Chemistry 2021 |