Na Liab,
Yi Jiang*a,
Xiaodi Wanga,
Chongyang Hua,
Wenchao Jianga,
Siyuan Lia and
Lixin Xia*ab
aCollege of Chemistry, Liaoning University, Shenyang 110036, Liaoning, China. E-mail: jiangyi@lnu.edu.cn; lixinxia@lnu.edu.cn
bDepartment of Chemical and Environmental Engineering, Yingkou Institute of Technology, Yingkou, 115014, Liaoning, China
First published on 8th April 2021
The separation and transfer of photogenerated electron–hole pairs in semiconductors is the key point for photoelectrochemical (PEC) water splitting. Here, an ideal TaON/BiVO4 heterojunction electrode was fabricated via a simple hydrothermal method. As BiVO4 and TaON were in well contact with each other, high performance TaON/BiVO4 heterojunction photoanodes were constructed. The photocurrent of the 2-TaON/BiVO4 electrode reached 2.6 mA cm−2 at 1.23 V vs. RHE, which is 1.75 times as that of the bare BiVO4. TaON improves the PEC performance by simultaneously promoting the photo-generated charge separation and surface reaction transfer. When a Co-Pi co-catalyst was integrated onto the surface of the 2-TaON/BiVO4 electrode, the surface water oxidation kinetics further improved, and a highly efficient photocurrent density of 3.6 mA cm−2 was achieved at 1.23 V vs. RHE. The largest half-cell solar energy conversion efficiency for Co-Pi/TaON/BiVO4 was 1.19% at 0.69 V vs. RHE, corresponding to 6 times that of bare BiVO4 (0.19% at 0.95 V vs. RHE). This study provides an available strategy to develop photoelectrochemical water splitting of BiVO4-based photoanodes.
In recent years, semiconductors based on metal oxides, such as BiVO4, TiO2, and WO3, have been widely used as photoanode materials.7–11 BiVO4, an n-type semiconductor with a band gap of 2.4 eV, is considered as one of the most promising alternative materials.12 Under the irradiation of a sunlight AM 1.5 G, the solar-to-hydrogen efficiency (STH) can reach 9.2%,13 which is close to the solar-powered water decomposition technology target (STH efficiency 10%).14 However, the severe recombination of the electron–hole pair of BiVO4 limits its development. Different strategies were adopted to enhance the PEC performance of BiVO4,15,16 such as elemental doping, nanostructure modification, loading cocatalysts and heterojunction construction. Among them, the construction of semiconductor heterojunctions with different materials is an effective approach to improve the PEC performance by enhancing the separation efficiency of photo-generated charges. Although there were numerous reports on heterojunction systems for BiVO4-based semiconductors, such as CaFe2O4/BiVO4,17 V2O5/BiVO4,18 WO3/BiVO419–21 and TiO2/BiVO4,22,23 the construction of a high-efficiency heterojunction photoanode still faces great challenges.
Here, TaON/BiVO4 heterojunction photoanodes were constructed, which exhibited a greatly improved PEC water oxidation activity compared to the bare BiVO4 photoanode. The photocurrent of the 2-TaON/BiVO4 photoanode reached 2.6 mA cm−2 at 1.23 V vs. RHE, which was 1.75-times that of BiVO4. In order to enhance the surface water oxidation kinetics of the photoanode, the Co-Pi water oxidation catalyst was immobilized on the photoanode, and the PEC performance was further promoted. A high photocurrent density of 3.6 mA cm−2 was obtained for Co-Pi/TaON/BiVO4 at 1.23 V vs. RHE.
The incident photon-to-current efficiency (IPCE) at each wavelength was determined at 1.23 V vs. RHE using monochromatic light illumination from a 300 W Xe arc lamp and neutral density filters simulating sunlight. The IPCE values have been calculated as follows:
The applied bias photon-to-current efficiency (ABPE) was calculated from a J–V curve using the following equation:
The total water oxidation photocurrent JH2O was determined by the following expression:
JH2O = Jabs × ηsep × ηtrans |
To obtain ηtrans, Na2SO3 was added into the 0.1 M PBS electrolyte, which was an efficient hole scavenger. Therefore, the ηtrans efficiency equal to 1, and the photocurrent could be described as JNa2SO3 = Jabs × ηsep. So, the ηsep could be described as:
ηsep = JNa2SO3/Jabs. |
The ηtrans was calculated using the equation:
ηtrans = JH2O/JNa2SO3 |
Fig. 1 SEM images of different electrodes. (a) BiVO4, (b) 1-TaON/BiVO4, (c) 2-TaON/BiVO4, (d) 3-TaON/BiVO4. |
X-ray photoelectron spectroscopy (XPS) was performed to investigate the chemical states of the TaON/BiVO4 electrodes. Ta, O, N, Bi and V elements were detected and shown in Fig. 2. Compared to the pristine BiVO4, the characteristic signals of TaON can be observed in the spectrum of the TaON/BiVO4 electrode. The characteristic peaks of N 1s and Ta 4p are shown in Fig. 2a. The binding energies of 529.7 eV and 532.0 eV are assigned to the O 1s of BiVO4, and the O 1s peak of TaON appears at 530.6 eV (Fig. 2b). The binding energies of 159.1 eV and 164.4 eV were assigned to the 4f7/2 and 4f5/2 of the Bi element, confirming that the Bi element was present as Bi3+ (Fig. 2c).27 The binding energies for the V 2p3/2 and V 2p1/2 located at 516.6 and 524.2 eV were typical values for V5+ (Fig. 2d).28 The Bi 4f and V 2p peaks of the TaON/BiVO4 electrode shifted positively compared to that of the BiVO4 electrode, indicating an interaction between TaON and BiVO4.
Fig. 2 XPS spectra of BiVO4 and TaON/BiVO4 electrodes: (a) N 1s, Ta 4p, (b) O 1s, (c) Bi 4f, (d) V 2p. |
The PEC measurements of BiVO4 and TaON/BiVO4 were carried out using a three-electrode system under simulated solar light 100 mW cm−2. The linear sweep voltammetry (LSV) curves of the sample electrodes are shown in Fig. 3a. The photocurrent density of TaON/BiVO4 electrodes was significantly higher than that of the bare BiVO4 electrode. The 2-TaON/BiVO4 photoanode showed the highest photocurrent density, reaching 2.6 mA cm−2 at 1.23 V vs. RHE, which was 1.75-times that of bare BiVO4. However, the photocurrent density of 3-TaON/BiVO4 was lower than that of 2-TaON/BiVO4, suggesting that excessive TaON nanospheres hindered the charge transfer. The applied bias photon-to-current efficiencies (ABPEs) of BiVO4 and TaON/BiVO4 electrodes were calculated by the LSV curves (Fig. 3b). The maximum value of the 2-TaON/BiVO4 electrode reached 0.61% at 0.74 V, about 3-times of the BiVO4 electrode (0.19% at 0.95 V).
Fig. 3 (a) LSV curves in the PBS solution, (b) ABPE values, (c) LSV curves in the PBS solution containing 0.1 M Na2SO3 and (d) the charge transfer efficiencies of different electrodes. |
In order to measure the charge recombination of the TaON/BiVO4 electrodes, 0.1 M Na2SO3 was added into the electrolyte as a hole scavenger for the PEC measurement.29 The introduction of Na2SO3 can eliminate the surface charge recombination. The PEC measurement results are shown in Fig. 3c. Compared to the bare BiVO4 electrode, all the TaON/BiVO4 electrodes showed higher photocurrent, which indicated that the combination of the two semiconductors produced a better charge separation. The 2-TaON/BiVO4 electrode showed the highest photocurrent density of 5.6 mA cm−2 at 1.23 V vs. RHE. Based on the LSV curves, the separation and surface charge transfer efficiencies of the sample electrodes are calculated and shown in Fig. S4† and 3d, respectively. All the TaON/BiVO4 electrodes exhibited higher ηsep and ηtrans than the bare BiVO4. 2-TaON/BiVO4 showed the highest values. These results indicated that the construction of TaON/BiVO4 could promote both charge separation and surface charge transfer.
The incident photon-to-current conversion efficiency (IPCE) values are shown in Fig. S2.† In the visible spectrum, TaON/BiVO4 showed a higher IPCE value than BiVO4. At 520 nm, the IPCE value dropped to 0, which was consistent with the absorption spectra (Fig. S3†).
In order to understand the charge transfer characteristics of TaON/BiVO4 and BiVO4 electrodes, electrochemical impedance spectroscopy (EIS) tests were performed in 0.1 M PBS at 1.23 V. Smaller semicircles represent better charge transfer capabilities and faster surface reaction kinetics. As shown in Fig. 4a, the BiVO4 electrode exhibited the largest semicircle among all electrodes, indicating the highest interface charge transfer barrier. Three sample TaON/BiVO4 electrodes showed smaller charge transfer resistance than the BiVO4 electrode, further confirming that TaON was beneficial to improve the charge transfer. The interface charge transfer resistance (Rct) of the sample electrodes is shown in Table S1.† 2-TaON/BiVO4 showed the smallest charge transfer resistance, which was in accordance with the photocurrents.
To investigate the charge transfer behavior between BiVO4 and TaON, photoluminescence (PL) measurements were performed. As shown in Fig. 4b. BiVO4 electrode exhibited a high-intensity characteristic emission, suggesting an obvious radiative charge recombination. However, the TaON/BiVO4 electrode exhibited much lower emission intensity. The obvious photoluminescence quenching for TaON/BiVO4 electrode fully proved the formation of TaON/BiVO4 heterojunctions.
The Mott–Schottky plots of BiVO4 and TaON were also measured. As shown in Fig. 4c, it can be seen that the CB positions of BiVO4 and TaON are 0.15 eV and 0.05 eV. The band gap width of BiVO4 and TaON obtained from the absorption spectrum were 2.41 eV and 2.16 eV, respectively (Fig. S5†). The valence band positions of BiVO4 and TaON can be calculated by the formula using ECB = EVB − Eg, which were 2.56 eV and 2.21 eV. The CB edge potential of TaON was more negative than that of BiVO4. Thus, a difference of band potentials existed between the two materials, and a contact electric field was built at the interface of the TaON and BiVO4. When electrons and holes were photogenerated, as shown in Fig. 4d, driven by the contact electric field, electrons transferred from TaON to BiVO4 and holes transferred from BiVO4 to TaON, thereby leading to an enhancement both in photogenerated charge separation and transfer.
In order to further enhance the PEC performance, Co-Pi, which is well-used as highly efficient catalyst in PEC water oxidation, was equipped onto the TaON/BiVO4 electrode. The SEM image of the Co-Pi/TaON/BiVO4 electrode showed that Co-Pi appeared to be discontinuous particles (Fig. 5a). The EDS-mapping (Fig. 5b–h) suggested the existence of Bi, V, O, Ta, N, Co, and P elements, indicating the successful fabrication of the Co-Pi/TaON/BiVO4 electrode. According to the LSV curves shown in Fig. 6a, an obviously increased photocurrent density was obtained for the Co-Pi/TaON/BiVO4 photoanode, achieving 3.6 mA cm−2 at 1.23 V vs. RHE, which was about 3-times higher than that of the BiVO4 electrode. During a potentiostatic electrolysis at 0.8 V vs. RHE, the bare BiVO4 electrode always exhibited very low photocurrent density. For Co-Pi/TaON/BiVO4 high activity and stability was observed for more than 6000 s (Fig. S6†). The half-cell photoconversion efficiency of the Co-Pi/TaON/BiVO4 electrode achieved 1.19% at 0.69 V (Fig. 6a), approximately 6-times compared to that of BiVO4 electrode.
Fig. 5 SEM image of the Co-Pi/TaON/BiVO4 electrode (a) and the EDS-mapping element of the Co-Pi/TaON/BiVO4 electrode. (b) Bi, (c) V, (d) O, (e) Ta, (f) N, (g) Co, (h) P. |
Footnote |
† Electronic supplementary information (ESI) available. See DOI: 10.1039/d1ra00974e |
This journal is © The Royal Society of Chemistry 2021 |