Haikuan
Liang
,
Zhihao
Zeng
,
Zhengping
Qiao
*,
Yan
Li
* and
Chengxin
Wang
State key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou 510275, People's Republic of China. E-mail: cesqzp@mail.sysu.edu.cn; liyan266@mail.sysu.edu.cn
First published on 20th January 2024
Lithium–sulfur (Li–S) batteries are considered as one of the promising next-generation energy storage devices due to their characteristics of high energy density and low cost. However, the shuttle effect and sluggish conversion of lithium polysulfide (LiPs) have hindered their commercial applications. To address these issues, in our previous works, we have screened several highly efficient single atom catalysts (SACs) (MN4@G, M = V, Mo and W) with atomically dispersed transition metal atoms supported by nitrogen doped graphene based on high throughput calculations. Nevertheless, they still suffer from low loading of metal centers and unsatisfactory capability for accelerating the reaction kinetics. To tackle such problems, based on first-principles calculations, we systematically investigated the heterointerface effect on the catalytic performance of such three MN4@G toward sulfur conversion upon forming heterostructures with 5 typical two-dimensional materials of TiS2, C3N4, BN, graphene and reduced graphene oxide. Guided by efficient descriptors proposed in our previous work, we screened VN4@G/TiS2, MoN4@G/TiS2 and WN4@G/TiS2 possessing low Li2S decomposition barriers of 0.54, 0.44 and 0.41 eV, respectively. They also possess enhanced capabilities for catalyzing the sulfur reduction reaction as well as stabilizing soluble LiPs. More interestingly, the heterointerface can enhance the capability of the carbon atoms far away from the metal centers for trapping LiPs. This work shows that introducing a heterointerface is a promising strategy to boost the performance of SACs in Li–S batteries.
Among the efficient catalysts, carbonaceous materials supported single atom catalysts (SACs) have been widely explored due to their superior catalytic performance for sulfur redox and LiP stabilization.10,13–15 Nevertheless, the performances of SACs for catalyzing sulfur redox, particularly the sulfur evolution reaction (SER), are still unsatisfactory. Therefore, to further enhance their catalytic performance toward the sulfur conversion is of importance, which might be realized by tailoring the electronic and structural properties of the central metals of SACs. In this regard, significant research efforts have been devoted to the design of SACs with transition metal atoms possessing various coordination environments, which involve graphene,13,14 C2N10 and g-C3N415 as the supports. In addition to doping strategies, the introduction of heterointerfaces has also been proved to be an efficient strategy to enhance the catalytic performance of electrochemical catalysts for energy storage and conversion, which can be realized by assembling two-dimensional (2D) materials into van der Waals heterostructures.16 These heterostructures are formed by chemical bonding or physical combination of two or more 2D materials. In recent years, this concept has also been adopted to design electrocatalysts for Li–S batteries, which will incorporate the merits of individual components to neutralize the shortcomings of each building block17–22 of the heterointerfaces. Nevertheless, there have been no reports on exploring the heterointerface effect on the catalytic performance of SACs for sulfur chemistry.
Up to now, various materials have been investigated for use as electrodes including 2D carbonaceous materials,23,24 metal sulfides,25,26 metal oxides27,28 and Mxenes.29,30 This implies that the combination of SACs with such materials will give rise to a huge number of heterostructures given the various metal centers of SACs. In this regard, to explore the catalytic performance particularly the SER performance of such heterostructures will be very time consuming, which accordingly requires an efficient descriptor guiding the systematic investigation. In our previous work, we have systematically investigated the descriptors of the Li2S decomposition energy barrier on MN4@G (typical configuration of SACs containing pyridine-N coordinated transition-metal atoms) and found that some properties could serve as universal descriptors for the rational design of SACs giving rise to a low Li2S decomposition barrier, which could predict the activity of the catalyst quickly.14
Here, we investigated systematically the performance of heterostructures for sulfur chemistry, which are built by combining SACs with 5 typical 2D materials. For SACs, we utilized three MN4@G (M = V, Mo and W) with the highest catalytic activity for Li2S decomposition screened in our previous work.14 The other 5 types of 2D materials are TiS2,31 C3N4,32 BN,33 graphene (G)34 and reduced graphene oxide (rGO).35 After examining the extendibility, we selected ΔE (energy difference before and after the Li2S decomposition) as the efficient descriptor for screening several heterostructures with enhanced catalytic performance for Li2S decomposition, which were then further explored for their performance for catalyzing SRR and stabilizing LiPs. Our work will pave a new way for designing electrocatalysts for sulfur chemistry in alkaline metal sulfide batteries.
The binding energy of heterostructures were calculated according to
![]() | (1) |
|a − ah|/ah × 100% | (2) |
The adsorption energy (Eads) is calculated based on the following formula:
Eads = Etotal − Esubstrate − Eadsorbate | (3) |
The Gibbs free energy of LiPs and S8 on substrates are calculated by
G = EDFT + Ezpe − TS | (4) |
The elementary reaction steps for sulfur reduction in lithium–sulfur (Li–S) batteries are considered as
![]() | (5) |
![]() | (6) |
![]() | (7) |
![]() | (8) |
![]() | (9) |
![]() | (10) |
The linear correlations between Eb and three descriptors ΔE, ΔE(*LiS) and ICOHP were identified in our previous work.14
Eb = 1.07 × ΔE + 0.16 | (11) |
Eb = 0.87 × ΔE(*LiS) + 0.38 | (12) |
Eb = −1.30 × ICOHP − 3.49 | (13) |
ΔE = E(*Li + *LiS) − E(*Li2S) | (14) |
ΔE(*LiS) = E(*LiS) + E(Li)bcc − E(*Li2S) | (15) |
The interaction strength between the components of the heterostructures can be evaluated by the binding energy (Ebin), which is calculated by eqn (1) in the ESI.† As listed in Table S2 (ESI†), the Ebin values for different heterostructures are between −13 and −21 meV Å−2 and close to that for van der Waals interaction,48 which can also be confirmed by the interlayer distance of 3.20–3.96 Å. Among them, the largest and smallest Ebin are −26.39 meV Å−2 (WN4@G/BN) and −7.49 meV Å−2 (MoN4@G/C3N4), respectively. Moreover, MN4@G can bind more strongly with BN than with other monolayers, while the binding strength of MN4@G with TiS2 and C3N4 are relatively weak. Among MN4@G/TiS2 or MN4@G/BN, the interaction strength of monolayers as M = V is stronger than that when M = Mo and W, due to the fact that V atom tends to sit between the two monolayers by forming chemical bond with two components of the heterostructures, as shown in Fig. S1 (ESI†). Note that heterostructures of MN4@G/rGO have significantly larger interlayer distances than the others due to the presence of functional groups on the surface of rGO.
The formation of heterostructures also induces the charge redistribution in the components, i.e. MN4@G loses charges to the adjacent layers leading to the metal centers more positively charged compared to that in the monolayer of MN4@G. The diagram of charge density difference of various heterostructures are illustrated in Fig. S1 (ESI†). In general, the charge transfer occurs mainly around the MN4 moiety and the specific values of charge transfer are listed in Table S2 (ESI†). However, for MN4@G/TiS2, there is a uniform charge redistribution throughout the interface. In general, the charge transfer between the monolayers in MN4@G/TiS2 and MN4@G/C3N4 is more pronounced than that in MN4@G/BN and MN4@G/G as illustrated in Table S2 (ESI†). Moreover, for MN4@G/TiS2 and MN4@G/C3N4, M = V gives rise to more charge transfer than M = Mo and W. Taking MN4@G/TiS2 as an example, the charge transfer in MN4@G/TiS2 is 1.48 e per cell, which is more than those in MoN4@G/TiS2 (1.11 e per cell) and WN4@G/TiS2 (1.11 e per cell). Although the total amount of charge transfer for MN4@G/BN is less than that for MN4@G/TiS2, the interaction between the monolayers is still stronger in MN4@G/BN than that in MN4@G/TiS2. This is attributed to the fact that the charge redistribution only occurs around the MN4 in the former case while there is wider range of charge redistribution for the rest case.
We selected some heterostructures as representatives and explored the decomposition of Li2S on them. The energy profiles of Li2S decomposition on WN4@G/G, VN4@G/BN, MoN4@G/rGO, WN4@G/C3N4, MoN4@G/TiS2 and WN4@G/TiS2 with the energetically preferable decomposition pathways are illustrated in Fig. 2. It can be seen from Fig. 2a that the Eb of Li2S decompositions on all heterostructures are lower than 1.0 eV. The lowest and the highest Eb are observed on WN4@G/TiS2 (0.41 eV) and WN4@G/G (0.83 eV), respectively. The catalytic performances of the heterostructures for the Li2S decomposition follow the order WN4@G/TiS2 > MoN4@G/TiS2 > WN4@G/C3N4 > VN4@G/TiS2 > MoN4@G/rGO > VN4@G/BN > WN4@G/G, and the corresponding Eb values are 0.41, 0.44, 0.50, 0.54, 0.58, 0.75 and 0.83 eV respectively. It should be noted that those heterostructures possess more enhanced capability for catalyzing SER than individual MN4@G, such as VN4@G (Eb = 0.70 eV), MoN4@G (Eb = 0.58 eV), WN4@G (Eb = 0.55 eV) and CoN4@G (Eb = 1.37 eV).13,14 Overall, the catalytic performance of MN4@G for the SER will be significantly improved when forming the heterostructures with C3N4, TiS2 and rGO. Moreover, due to the different adsorption configurations of Li2S, two different Li2S decomposition pathways are identified as shown in Fig. 2b. And the cleavage of the Li–S bond on WN4@G/G is along the path I, while for the rest cases it follows the relatively short path II.
It should be noted that the decomposition of Li2S on VN4@G/TiS2 is a bit complex as reflected by the energy profiles of Li2S decomposition (see Fig. 3a). This is due to the specific structural configuration of VN4@G/TiS2, for which the V atom sits between the graphene layer and TiS2 (see Fig. 3b). This further leads to the weak interaction between Li2S and the V atom upon the adsorption of Li2S on VN4@G/TiS2 since the S atom of Li2S cannot form a chemical bond with the V atom with only the Li atoms binding to N/C atoms from the N doped graphene. Overall, the whole process of Li2S decomposition on VN4@G/TiS2 can be divided into two subprocesses. Firstly, before the breakage of Li–S bonds in adsorbed Li2S, the V atom moves back to the center of the N edged hole and binds to the S atom of adsorbed Li2S, leaving the V–S (S from TiS2) bond broken (see Fig. 3b). This process just requires overcoming a very small energy barrier of 0.21 eV as shown in Fig. 3a. Meanwhile, the angle of Li–S–Li bond gradually increases from 85.01° to 139.29° and the bond length of Li–S also expands from 2.25 Å to 2.39 Å. It is then followed by the second subprocess of Li2S decomposition accompanied by the Li–S bond breakage as shown in Fig. 3c (consistent with the decomposition pathway II in Fig. 2b), which necessitates surmounting an energy barrier of 0.54 eV.
It is time-consuming to calculate directly the Eb values for 15 heterostructures using the CI-NEB method. In our previous works, we have identified three descriptors ΔE, ΔE(*LiS) and ICOHP correlating well with Eb for MN4@G, where ΔE refers to the energy difference between the initial and final states of the Li2S decomposition, ΔE(*LiS) stands for the reaction energy of the Li2S decomposition and ICOHP means the integral value of the crystal orbital Hamilton population for evaluating the binding strength of Li–S in adsorbed Li2S.14 And the corresponding functions describing the linear correlations between Eb and ΔE, ΔE(*LiS), ICOHP are shown in the computational details. Among them, ΔE performs the best in predicting Eb values. Based on the available data from the current study, we next explored the predictive capability of ΔE, ΔE(*LiS), ICOHP for determining Eb and then to screen high performance MN4@G/ML for Li2S decomposition. As shown in Fig. 4a, all the data points of Eb fall near the line, implying the robustness of the functional of Eb = 1.07 × ΔE + 0.16 proposed in our previous work.14 The minimum percentage error of Eb between the ΔE–Eb prediction and the CI-NEB calculation occurs in VN4@G/TiS2, which is only 2.22%. The largest percentage error is observed in WN4@G/C3N4, reaching 14%, but the specific difference is only 0.07 eV. The percentage errors of the predicted values with respect to those obtained from CI-NEB calculations for the remaining structures are all below 10%. In contrast, the ΔE(*LiS)−Eb and ICOHP−Eb relationships from the current study do not follow the trend described by those linear functions obtained from previous works (see Fig. 4b and c). The corresponding data of predicted Eb values based on ΔE, ΔE(*LiS) and ICOHP are listed in Table S3 (ESI†). Overall, these results show that ΔE can serve as the best descriptor and provide efficient theoretical guidance for fast screening of active MN4@G/ML toward Li2S decomposition based on the equation of Eb = 1.07 × ΔE + 0.16.
![]() | ||
Fig. 4 Calculated values of Eb using the CI-NEB method (green balls) for representative heterostructures as a function of ΔE (a), ΔE(*LiS) (b) and ICOHP (c). In (a), the linear relationship (black lines), obtained in our previous works for graphene supported SACs was included for comparison.14 |
As listed Table S3 (ESI†), the Eb values are predicted based on the linear function Eb = 1.07 × ΔE + 0.16 for 15 heterostructures which are built by combining 3 MN4@G with 5 monolayers. Among them, MoN4@G/TiS2 and WN4@G/TiS2 give rise to significantly low Eb values of 0.40 and 0.43 eV, which are accordingly highly efficient for catalyzing the SER. In contrast, the worst SER performance is found for VN4@G/C3N4 with Eb = 2.24 eV since the V center does not participate in activating the Li–S bond. As shown in Fig. 5a, in VN4@G/C3N4 the V atom tends to sit between the graphene and C3N4 monolayers leading to the absence of S–V bonds upon the Li2S deposition indicating that there is no direct interaction between Li2S and the V center. Moreover, this holds for the whole process of Li2S decomposition. Therefore, the catalytic performance of VN4@G/C3N4 for Li2S decomposition is rather worse compared to the rest of the heterostructures. It should be noted that, in the VN4@G/TiS2 the V atom remains between graphene and TiS2 monolayers after the Li2S adsorption. However, during the Li2S decomposition the V atom can move back the N-edged hole and form a chemical bond with S from Li2S by overcoming a low energy barrier of 0.21 eV (see Fig. 2a). This S–V bond even remains when the Li–S bond is eventually broken as shown in Fig. 5b. Therefore, VN4@G/TiS2 still shows efficient SER performance by giving rise to a low Eb of 0.54 eV.
![]() | ||
Fig. 5 Initial and final structures of Li2S decomposition on VN4G/C3N4 (a) and VN4@G/TiS2 (b). The orange, yellow, green spheres represent the V, S and Li atoms. |
We next analyzed the heterointerface effect on the catalytic performance of MN4@G for SER. To this end, three SACs of WN4@G, MoN4@G, and VN4@G, screened by our previous work14 were considered to explore the changes of Eb before and after forming the heterointerfaces. Table 1 shows a comparison of Eb values between MN4@G and MN4@G/ML (M = V, Mo and W; ML = TiS2, C3N4, BN, G and rGO). The energy barriers of Li2S decomposition over MN4@G are decreased when forming the heterostructures with TiS2, C3N4 and rGO. Among them, TiS2 provides the best effect on surface regulation leading to enhanced SER performance of MN4@G by giving rise to Eb of 0.41, 0.44 and 0.54 for WN4@G/ML, MoN4@G/TiS2 and VN4@G/TiS2, respectively, while the effect of C3N4 and rGO on enhancing the catalytic activity for SER was significantly weak. In contrast, BN and G actually increased the Eb on VN4@G and WN4@G, respectively, indicating decreased SER performances. Note that the VN4@G/C3N4 gives rise to the Eb value of 2.24 eV significantly larger than that of 0.70 eV given by VN4@G. This is due to the fact that the V atom does not participate in catalyzing the Li2S decomposition. As shown in Fig. 5a, during the whole process of Li2S decomposition, no chemical bond is formed between the Li2S cluster and the atomically dispersed V atom sitting between VN4@G and C3N4.
Heterostructures | MN4@G | |
---|---|---|
a E b values obtained based on the NEB method. b E b values predicted by the Eb–ΔE relationship. | ||
WN4@G/TiS2 | 0.41a | 0.55 |
MoN4@G/TiS2 | 0.44a | 0.58 |
VN4@G/TiS2 | 0.54a | 0.70 |
WN4@G/C3N4 | 0.50a | 0.55 |
MoN4@G/C3N4 | 0.57b | 0.58 |
VN4@G/C3N4 | 2.24b | 0.70 |
WN4@G/BN | 0.62b | 0.55 |
MoN4@G/BN | 0.63b | 0.58 |
VN4@G/BN | 0.75a | 0.70 |
WN4@G/rGO | 0.54b | 0.55 |
MoN4@G/rGO | 0.58a | 0.58 |
VN4@G/rGO | 0.79b | 0.70 |
MoN4@G/G | 0.74b | 0.55 |
WN4@G/G | 0.83a | 0.58 |
VN4@G/G | 0.79b | 0.70 |
As shown in Fig. 6a and Table S4 (ESI†), the adsorption energies of LiPs on MN4@G/TiS2 (M = Mo and W) are both below −3.00 eV, which are lower than those on the organic electrolyte molecules such as 1,3-dioxynaphthenes (DOL) and 1,2-dimethoxy ethane (DME) within the range of −1.00 to −0.80 eV.49 This implies the advantages of such heterointerfaces in suppressing the shuttle effect because the host material exhibits stronger adsorption performance than the organic electrolyte molecules. Moreover, WN4@G/TiS2 possesses more enhanced capability in trapping LiPs than MoN4@G/TiS2. In detail, the adsorption energies of LiPs (Li2Sx, x = 1, 2, 4, 6, 8) and S8 on the WN4@G/TiS2 interface are −5.21, −5.15, −4.17, −4.17, −4.33 and −2.52 eV, respectively. They are lower than the corresponding values on MoN4@G/TiS2, which are −4.67, −3.72, −3.71, −3.35, −3.28 and −2.11 eV, respectively. Note that the adsorption energies on individual TiS2 and MN4@G are higher than those on the heterostructures as shown in Table S4. Therefore, the capabilities of MoN4@G and WN4@G in stabilizing LiPs are generally enhanced when combined with TiS2. In contrast, the adsorption strength of VN4@G/TiS2 to LiPs and S8 are weaker than that for MN4@G/TiS2 (M = Mo and W). The lowest adsorption energy observed on VN4@G/TiS2 is merely −1.73 eV for Li2S adsorption, which means that the adsorption strength of VN4@G to LiPs is significantly weakened upon forming a heterointerface with TiS2. This can be attributed to the formation of V–S bonds in the interlamination of VN4@G/TiS2. When the reaction intermediates are adsorbed on VN4@G/TiS2, the lack of V atoms on the surface of VN4@G/TiS2 leads to the absence of chemical bond between V atoms and LiPs/S8, indicating a relatively weak interaction strength between the heterostructure and LiPs/S8.
![]() | ||
Fig. 6 The bar chart of adsorption energies of LiPs and S8 on MN4@G/TiS2 (a), G/TiS2, graphene (G) and TiS2 (b). ML1/ML2 indicates the adsorption site is on ML1. |
We also considered the binding strength of TiS2 of three heterostructures to the adsorbates and found that the adsorption energies of various clusters on TiS2/MN4@G (M = V, Mo and W) are very similar. Furthermore, the values are comparable to the adsorption on pure TiS2, suggesting that MN4@G has a tiny impact on the adsorption performance of TiS2 in heterostructures.
The application of MN4@G is often constrained by the low loading density of metal atoms and heterogeneous distribution of doping sites. In the region without dopants, the local structure of MN4@G retains the carbon lattice of pure graphene. Therefore, we set up a model of G/TiS2 in order to further examine the regulatory role of TiS2 on the performance of such carbon atoms far away from the metal centers. As shown in Fig. 6b and Table S4, G/TiS2 possesses enhanced trapping capabilities for LiPs with respect to G. Moreover, the adsorption energies of Li2S4, Li2S6 and Li2S8 on G/TiS2 are −1.03, −0.94 and −1.01 eV, respectively, which are lower than those for organic electrolyte (−1.00 to −0.80 eV). Therefore, combining with TiS2 can enhance the adsorption performance of the entire region of MN4@G monolayers for LiPs, which will help overcome the disadvantages of low loading of atomically dispersed atoms in MN4@G.
We have also investigated the SRR performance of those heterostructures by calculating the Gibbs free energy changes (ΔG) profile as depicted in Fig. 7. For MoN4@G/TiS2 and WN4@G/TiS2 (see Fig. 7a), the ΔG values of overall SRR are −1.06 and −1.19 eV, respectively, which are lower than those of −0.41 and −0.33 eV for MoN4@G and WN4@G, respectively. Moreover, the ΔG of rate-determining step (ΔGRDS) for the transition from Li2S2 to Li2S are 3.99 and 4.89 eV, lower than the corresponding values of 4.25 and 4.36 eV for individual MoN4@G and WN4@G, respectively. These results imply the positive effect of heterointerface on enhancing the SRR performance of MN4@G (M = Mo and W). In contrast, the overall ΔG of SRR on VN4@G/TiS2 is 0.37 eV, which is larger than −0.82 eV for VN4@G. Such an increase of ΔG can be attributed to the structural feature of VN4@G/TiS2 with the V atom located between VN4@G and TiS2 and formation of the V–S bond. It means that the single V atom in VN4@G/TiS2 will not participate in forming chemical bonds with LiPs and S8 during the SRR process leading to decreased SRR performance compared to individual VN4@G. When it turns to TiS2/MN4@G (M = Mo, W and V), the overall ΔG of SRR are −1.61, −1.66, and −1.17 eV, respectively, while the related ΔGRDS values are 3.82, 3.75 and 4.32 eV. These values are comparable to the corresponding values for individual TiS2. This shows that the heterointerface effect on the SRR performance of TiS2 is relatively weak. Regarding G and G/TiS2, they exhibit even worse performance for SRR, as reflected by the ΔG values of 0.69 and 0.48 eV for the overall SRR, respectively (see Fig. 7b). This also implies that the SRR performance of carbon atoms far away from the metal centers in MN4@G/TiS2 (M = Mo, W and V) is relatively worse, which is still better than that for pristine graphene. Nevertheless, based on the above analysis, we believe that both sides of MN4@G/TiS2 possess promising performance for SRR. Overall, MN4@G/TiS2 (M = Mo and W) show good performance in stabilizing LiPs and accelerating the kinetics of SER/SRR as confirmed by the low values of adsorption energies for LiPs/S8, ΔG for overall SRR, ΔGRDS and Eb for Li2S decomposition, which demonstrate that they are promising candidates electrocatalysts for sulfur chemistry in Li–S batteries.
Footnote |
† Electronic supplementary information (ESI) available: Computational details; structure information of heterostructure materials; additional figures and tables. See DOI: https://doi.org/10.1039/d3cp05883b |
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