Open Access Article
This Open Access Article is licensed under a Creative Commons Attribution 3.0 Unported Licence
Correction: Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot
Moh'd
Rezeq
*ab,
Yawar
Abbas
ab,
Boyu
Wen
c,
Zbig
Wasilewski
c and
Dayan
Ban
*c
aDepartment of Physics, Khalifa University of Science and Technology, POB 127788, Abu Dhabi, United Arab Emirates. E-mail: mohd.rezeq@ku.ac.ae
bSystem on Chip Centre, Khalifa University of Science and Technology, POB 127788, Abu Dhabi, United Arab Emirates
cDepartment of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, ON, Canada. E-mail: dban@uwaterloo.ca
First published on 17th June 2024
Abstract
Correction for ‘Physical probing of quantum energy levels in a single indium arsenide (InAs) quantum dot’ by Moh'd Rezeq et al., Nanoscale Adv., 2023, 5, 5562–5569, https://doi.org/10.1039/D3NA00638G.
The authors regret that in the original publication, eqn 2(a)–(c) contained errors. The correct equations are given below:
 | (2a) |
 | (2b) |
 | (2c) |
In addition, in the first line of the Abstract, the abbreviation for molecular beam epitaxy is incorrectly listed as EBM instead of the correct abbreviation MBE. Lastly, in the first line on page 5565 in the original publication, there is a typographical error in the word “indicate…”. The correct sentence is the following: “This indicates a completely discharged QD.”
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
| This journal is © The Royal Society of Chemistry 2024 |