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Correction: Improved isoprene detection performance of Si-doped WO3 films deposited by sputtering and post-annealing
Pin-Kuan Lina,
Yi Qina,
Xiaoding Qi*ab and
Liji Huangc
aDepartment of Materials Science and Engineering, National Cheng Kung University, Tainan City 70101, Taiwan. E-mail: xqi045@ncku.edu.tw
bCentre for Micro/Nano Science and Technology, National Cheng Kung University, Tainan City 70101, Taiwan
cSiargo Ltd, Santa Clara, California 95054, USA
First published on 7th November 2024
Abstract
Correction for ‘Improved isoprene detection performance of Si-doped WO3 films deposited by sputtering and post-annealing’ by Pin-Kuan Lin et al., RSC Adv., 2024, 14, 13618–13627, https://doi.org/10.1039/D4RA00184B.
The authors regret an error in Fig. 1 where Fig. 1b was mistakenly replaced by another image used as a scaling reference.
The corrected Fig. 1, with the original data for Fig. 1b, is shown below.
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| Fig. 1 Surface SEM images for (a) 0SiW, (b) 6SiW and (c) 11SiW. Cross-sectional SEM images for (d) 0SiW, (e) 6SiW and (f) 11SiW. | ||
An independent expert has viewed the new data and has concluded that it is consistent with the discussions and conclusions presented.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
| This journal is © The Royal Society of Chemistry 2024 |