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Correction: Effects of pressure and temperature on topological electronic materials X2Y3 (X = As, Sb, Bi; Y = Se, Te) using first-principles
Le Fangab,
Chen Chenac,
Xionggang Lu*ad and
Wei Ren*ae
aState Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, ICQMS and Physics Department, Shanghai University, Shanghai 200444, China. E-mail: luxg@shu.edu.cn; renwei@shu.edu.cn
bInstitut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin 12489, Germany
cNOMAD Laboratory, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin 14195, Germany
dSchool of Materials Science, Shanghai Dianji University, Shanghai 200240, China
eShanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai 200444, China
First published on 12th February 2025
Abstract
Correction for ‘Effects of pressure and temperature on topological electronic materials X2Y3 (X = As, Sb, Bi; Y = Se, Te) using first-principles’ by Le Fang et al., Phys. Chem. Chem. Phys., 2023, 25, 20969–20978, https://doi.org/10.1039/D3CP01951A.
The funding information in the Acknowledgements section was displayed incorrectly. The correct funding information is shown here.
This work was supported by the National Natural Science Foundation of China (12074241, 11929401, and 52130204), the Science and Technology Commission of Shanghai Municipality (22XD1400900, 20501130600, 21JC1402700, and 21JC1402600), the China Postdoctoral Science Foundation (2022M722035), the China Scholarship Council (CSC), and the Key Research Project of Zhejiang Laboratory (2021PE0AC02), High-Performance Computing Center, Shanghai Technical Service Center of Science and Engineering Computing, Shanghai University. We thank Matthias Scheffler and Christian Carbogno (Fritz-Haber-Institut der Max-Planck-Gesellschaft) for fruitful discussions and suggestions.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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