Issue 48, 2014

Low-temperature annealed PbS quantum dot films for scalable and flexible ambipolar thin-film-transistors and circuits

Abstract

Thiocyanate (SCN)-treated lead sulfide (PbS) quantum dot thin-film-transistors (QD TFTs) and CMOS-compatible circuits were fabricated on a flexible substrate via a scalable photolithography process. Spectroscopic and electrical investigations demonstrated that the thermal treatments induce ligand decomposition and densification of the QD arrays at around 170 °C. High temperature annealing above 200 °C induces an aggregation of the QD particles, resulting in a degradation of device performance, such as the field-effect mobility and the on-/off-current ratio. It is also noted that the surface defects which act as charge carrier traps are increased with the annealing temperature, possibly due to the decomposition of the SCN leading to an aggregation of the QD particles. On the basis of the experimental results, bottom-gate and bottom-contact ambipolar PbS QD TFTs with an electron/hole mobility of 0.47/0.43 cm2 V−1 s−1 and CMOS inverter circuits with gains of >14 V at a supply bias of 10 V were successfully fabricated on spin-on thin plastic substrates.

Graphical abstract: Low-temperature annealed PbS quantum dot films for scalable and flexible ambipolar thin-film-transistors and circuits

Supplementary files

Article information

Article type
Paper
Submitted
24 Jul 2014
Accepted
13 Oct 2014
First published
20 Oct 2014

J. Mater. Chem. C, 2014,2, 10305-10311

Low-temperature annealed PbS quantum dot films for scalable and flexible ambipolar thin-film-transistors and circuits

C. H. Jo, J. H. Kim, J. Kim, J. Kim, M. S. Oh, M. S. Kang, M. Kim, Y. Kim, B. Ju and S. K. Park, J. Mater. Chem. C, 2014, 2, 10305 DOI: 10.1039/C4TC01624F

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