Issue 87, 2017

Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex

Abstract

The ITO/active material/Au sandwiched devices of a cobalt(II) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio (>103) and low operating voltages (<±3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.

Graphical abstract: Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex

Supplementary files

Article information

Article type
Communication
Submitted
26 Jul 2017
Accepted
11 Oct 2017
First published
11 Oct 2017

Chem. Commun., 2017,53, 11925-11928

Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(II) bis-terpyridine complex

J. Tang, T. Sun, J. Shao, Z. Gong and Y. Zhong, Chem. Commun., 2017, 53, 11925 DOI: 10.1039/C7CC05806C

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