Issue 50, 2018, Issue in Progress
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RSC Advances

Correction: A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification

Hailiang Liu,ab   Sajjad Hussain,ab   Asif Ali,ab   Bilal Abbas Naqvi,ab   Dhanasekaran Vikraman,c   Woonyoung Jeong,ab   Wooseok Song,d   Ki-Seok And  and  Jongwan Jung*ab  

* Corresponding authors

a Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea
E-mail: jwjung@sejong.ac.kr

b Institute of Nano and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea

c Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea

d Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejon 305-600, Korea

Abstract

Correction for ‘A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification’ by Hailing Liu et al., RSC Adv., 2018, 8, 25514–25518.

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Article information

DOI
https://doi.org/10.1039/C8RA90067A
Article type
Correction
Submitted
01 Aug 2018
Accepted
01 Aug 2018
First published
13 Aug 2018
This article is Open Access
Creative Commons BY license

RSC Adv., 2018,8, 28692-28692

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Correction: A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification

H. Liu, S. Hussain, A. Ali, B. A. Naqvi, D. Vikraman, W. Jeong, W. Song, K. An and J. Jung, RSC Adv., 2018, 8, 28692 DOI: 10.1039/C8RA90067A

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