The effect of strain on effective Duffing nonlinearity in the CVD-MoS2 resonator

Abstract

We demonstrate all electrical measurements on NEMS devices fabricated using CVD grown monolayer MoS₂. The as-grown monolayer film of MoS₂ on top of the SiO₂/Si wafer is processed to fabricate arrays and individual NEMS devices without the complex pick and transfer techniques associated with graphene. The electromechanical properties of the devices are on par with those fabricated using the exfoliation method. The frequency response of these devices is then used as a probe to estimate the linear thermal expansion coefficient of the material and evaluate the effect of strain on the effective Duffing nonlinearity in the devices.