Issue 42, 2019

Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation

Abstract

Correction for ‘Interface-engineered reliable HfO2-based RRAM for synaptic simulation’ by Qiang Wang et al., J. Mater. Chem. C, 2019, DOI: 10.1039/c9tc04880d.

Associated articles

Article information

Article type
Correction
Submitted
10 Oct 2019
Accepted
10 Oct 2019
First published
17 Oct 2019
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2019,7, 13307-13307

Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation

Q. Wang, G. Niu, S. Roy, Y. Wang, Y. Zhang, H. Wu, S. Zhai, W. Bai, P. Shi, S. Song, Z. Song, Y. Xie, Z. Ye, C. Wenger, X. Meng and W. Ren, J. Mater. Chem. C, 2019, 7, 13307 DOI: 10.1039/C9TC90222H

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