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Corresponding authors
a
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
E-mail:
gangniu@xjtu.edu.cn, wren@mail.xjtu.edu.cn
b
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
c
Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA
d
Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, Canada
e
IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
f
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China