In situ AP-XPS analysis of a Pt thin-film sensor for highly sensitive H2 detection

Ryo Toyoshima; Takahisa Tanaka; Taro Kato; Ken Uchida; Hiroshi Kondoh

doi:10.1039/D0CC04030D

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In situ AP-XPS analysis of a Pt thin-film sensor for highly sensitive H₂ detection†

Ryo Toyoshima,^a Takahisa Tanaka,^b Taro Kato,^b Ken Uchida^b and Hiroshi Kondoh

*^a

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* Corresponding authors

^a Department of Chemistry, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522, Japan
E-mail: kondoh@chem.keio.ac.jp
Tel: +81-45-566-1701

^b Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan

Abstract

In situ ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) combined with resistivity measurement was performed for a Pt thin-film H₂ gas sensor. We experimentally demonstrate that the chemical state of the Pt surface changes under working conditions, and it directly links to the sensing performance. Moreover, the operating principle is discussed at the atomic scale.

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Article information

DOI: https://doi.org/10.1039/D0CC04030D
Article type: Communication
Submitted: 09 Jun 2020
Accepted: 21 Jul 2020
First published: 31 Jul 2020

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Chem. Commun., 2020,56, 10147-10150

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In situ AP-XPS analysis of a Pt thin-film sensor for highly sensitive H₂ detection

R. Toyoshima, T. Tanaka, T. Kato, K. Uchida and H. Kondoh, Chem. Commun., 2020, 56, 10147 DOI: 10.1039/D0CC04030D

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